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Product Detailed Parameters
- Description：MOSFET P-CH 12V 15A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：11mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：44 nC @ 8 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：1860 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type F)
- Package / Case：6-UDFN Exposed Pad
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Overview
The DMP1009UFDF-7 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a U-DFN2020-6 (Type F) package. It features a drain-source voltage of -12V and a maximum continuous drain current of -11A at +25°C. The device offers low on-resistance, specified as 11mΩ max at VGS = -4.5V and ID = -5A. Total gate charge is 44nC max at VGS = -8V. Operating temperature range spans from -55°C to +150°C.
Feature Summary
- Designed for high efficiency power management applications with minimized on-state resistance.
- Features a 0.6mm profile suitable for low profile applications.
- Includes an ESD protected gate structure.
- Manufactured using lead-free and fully RoHS compliant processes.
Applications
- Battery Management Systems
- Power Management Functions
- DC-DC Converters
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the standard commercial version meets project requirements, noting that automotive-compliant variants require separate datasheets and qualification standards such as AEC-Q101.
Selection Notes
Select this component for circuits requiring a compact footprint with a 4mm² PCB area. Evaluate thermal performance based on the 152°C/W junction-to-ambient resistance on FR-4 substrates. Ensure gate drive voltages align with the threshold characteristics for optimal switching speed and conduction losses.
Part Context
This part belongs to the DMP series of P-channel MOSFETs manufactured by Diodes Incorporated. It utilizes the U-DFN2020-6 case style, which provides a small surface-mount solution. The product line focuses on balancing low RDS(ON) with fast switching capabilities for modern power electronics.
Replacement Considerations
The automotive-compliant alternative is the DMP1009UFDFQ. Verify pinout compatibility and electrical limits when substituting with other -12V P-channel devices from different manufacturers.
FAQ
What is the maximum pulsed drain current?
The maximum pulsed drain current is -70A, defined by a 10μs pulse duration with a 1% duty cycle.
Is this component qualified for automotive use?
The standard DMP1009UFDF-7 is not explicitly stated as AEC-Q101 qualified; customers requiring automotive compliance should contact Diodes Incorporated or refer to the DMP1009UFDFQ variant.
