DMP1011LFV-7

$0.22

Description：MOSFET P-CH 12V 19A POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:43467ff5bec7 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 12V 19A POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：12 V
Current - Continuous Drain (Id) @ 25°C：19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：11.7mOhm @ 12A, 4.5V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：9.5 nC @ 6 V
Vgs (Max)：-6V
Input Capacitance (Ciss) (Max) @ Vds：913 pF @ 6 V
FET Feature：-
Power Dissipation (Max)：2.16W
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI3333-8
Package / Case：8-PowerVDFN

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DMP1011LFV-7

Overview

The DMP1011LFV-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -12 V drain-source breakdown voltage and a maximum continuous drain current of -19 A at +25°C case temperature. The device exhibits a low on-state resistance of 11.7 mΩ at VGS = -4.5 V and 18.6 mΩ at VGS = -2.5 V. Packaged in a thermally efficient PowerDI3333-8 (Type UX) footprint, it supports an operating junction temperature range from -55°C to +150°C.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
Utilizes a small form factor PowerDI package that occupies only 33% of the board area compared to SO-8 packages, enabling higher density end products.
Features gate protection against electrostatic discharge up to 3 kV.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix when purchasing. The DMP1011LFV-7 variant is supplied in a tape and reel packaging format with a quantity of 2,000 units per reel. Confirm that the required packaging matches the project specifications before placing orders.

Selection Notes

Select this component for designs requiring a compact P-channel switch with low conduction losses. Ensure the gate drive voltage meets the threshold requirements for the desired on-resistance level. Verify thermal management capabilities based on the specified junction-to-ambient resistance values under the intended PCB layout conditions.

Part Context

This part belongs to the DMP series of P-channel enhancement mode MOSFETs produced by Diodes Incorporated. These devices are engineered for high-density surface mount applications where minimizing board space and reducing power dissipation are critical design constraints.

Replacement Considerations

The datasheet lists no officially confirmed substitute part numbers. Evaluate alternative components based on matching electrical parameters such as voltage rating, current capacity, and package dimensions.