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Product Detailed Parameters
- Description：MOSFET BVDSS: 8V~24V POWERDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：13A (Ta), 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：11.7mOhm @ 12A, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：9.5 nC @ 6 V
- Vgs (Max)：-6V
- Input Capacitance (Ciss) (Max) @ Vds：913 pF @ 6 V
- FET Feature：-
- Power Dissipation (Max)：1.05W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI3333-8 (SWP) Type UX
- Package / Case：8-PowerVDFN
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Overview
The DMP1011LFVQ-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -12V drain-source breakdown voltage and a maximum continuous drain current of -19A at TC = +25°C. The device offers a typical on-resistance of 9.8mΩ at VGS = -4.5V and 14.6mΩ at VGS = -2.5V. It utilizes the PowerDI3333-8 package, operates within a temperature range of -55°C to +150°C, and has a total power dissipation of 1.05W in steady state.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency applications.
- Qualified to AEC-Q101 standards with PPAP support, suitable for automotive applications requiring specific change control.
- Utilizes a small form factor thermally efficient package that occupies only 33% of the board area compared to SO-8 packages.
Applications
- Backlighting
- Power Management Functions
- DC-DC Converters
Procurement Notes
Verify the component against the official Diodes Incorporated datasheet DS42609 Rev. 1-2. Confirm the part number suffix matches the required packaging quantity, as the LFVQ variant corresponds to the Tape & Reel format. Ensure compliance with RoHS and halogen-free requirements specified in the manufacturer's documentation before finalizing procurement specifications.
Selection Notes
Select this component when designing circuits requiring a compact P-channel MOSFET with low on-resistance and automotive qualification. The PowerDI3333-8 package provides significant board space savings compared to traditional SO-8 footprints. Consider the thermal characteristics and junction-to-ambient resistance values when determining heat dissipation requirements for the specific application environment.
Part Context
This component belongs to the DMP series of P-channel enhancement mode MOSFETs from Diodes Incorporated. It is specifically engineered for high-density end products where minimizing board area is critical. The device integrates advanced silicon technology to achieve low conduction losses without compromising switching speed or reliability in demanding power management scenarios.
Replacement Considerations
Consult the official Diodes Incorporated documentation for verified equivalent parts. Cross-referencing should strictly adhere to electrical parameters and package dimensions defined in the datasheet to ensure functional compatibility in existing designs.
