DMP1012UFDF-13

$0.12

Description：MOSFET P-CH 12V 12.6A/20A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:e3921c4df709 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 12V 12.6A/20A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：12 V
Current - Continuous Drain (Id) @ 25°C：12.6A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：15mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id：900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：31 nC @ 8 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：1344 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：720mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type F)
Package / Case：6-UDFN Exposed Pad

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DMP1012UFDF-13

Overview

The DMP1012UFDF-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -12V drain-source voltage rating and operates within a junction temperature range of -55°C to +150°C. The device utilizes a U-DFN2020-6 (Type F) package with a 0.6mm profile. Key electrical parameters include a maximum on-resistance of 15mΩ at VGS = -4.5V and a continuous drain current of -20A at TC = +25°C.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
Features a low profile case construction ideal for space-constrained designs.
Constructed with lead-free, fully RoHS compliant materials that are also halogen and antimony free.

Applications

Battery Management Applications
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration as defined in the manufacturer's documentation. Confirm compliance requirements against the latest EU Directive standards referenced in the datasheet notes before finalizing procurement specifications.

Selection Notes

Select this component when designing circuits requiring a compact P-channel switch with a -12V breakdown voltage. Evaluate thermal dissipation capabilities based on the specified junction-to-ambient resistance values under steady-state conditions. Ensure gate drive voltages align with the threshold characteristics to optimize conduction losses.

Part Context

This part belongs to the DMP series of P-channel MOSFETs from Diodes Incorporated. It shares the U-DFN2020-6 package form factor with other devices in the lineup but is distinguished by its specific -12V voltage rating and associated electrical performance metrics tailored for low-voltage power switching tasks.