DMP1012USSQ-13

$0.12

Description：MOSFET BVDSS: 8V~24V SO-8 T&R 2.
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:db6cd3302e84 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 8V~24V SO-8 T&R 2.
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：12 V
Current - Continuous Drain (Id) @ 25°C：8.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：13.5mOhm @ 9A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：31 nC @ 8 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：1344 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：1.3W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMP1012USSQ-13

Overview

The DMP1012USSQ-13 is a P-channel enhancement mode MOSFET designed for automotive applications. It features a drain-source voltage of -12V and a continuous drain current of -8.5A at +25°C. The device offers low on-resistance, reaching a maximum of 13.5mΩ at VGS = -4.5V. It operates within a temperature range of -55°C to +150°C and is housed in an SO-8 package.

Feature Summary

Qualified to AEC-Q101 standards with PPAP capability for automotive use
Low on-resistance for efficient power management
Fast switching speed with low input capacitance
Totally lead-free and fully RoHS compliant

Applications

Motor controls
Backlighting
Power management functions
DC-DC converters

Procurement Notes

Verify the component matches the specific automotive qualification requirements, including AEC-Q101 compliance and PPAP documentation. Confirm that the SO-8 package dimensions align with the target PCB layout. Ensure the sourcing channel provides original manufacturer packaging to maintain product integrity and traceability.

Selection Notes

Select this component when designing circuits requiring a -12V P-channel MOSFET with high current handling capabilities. The low on-resistance makes it suitable for applications where minimizing conduction losses is critical. Consider the thermal resistance characteristics when determining heat dissipation strategies for the system design.

Part Context

This part belongs to Diodes Incorporated's portfolio of automotive-grade MOSFETs. It is manufactured in IATF 16949 certified facilities, ensuring consistent quality for demanding automotive environments. The device is designed to meet stringent reliability standards required by the automotive industry.

Replacement Considerations

Check datasheets for alternative parts to ensure compatibility with -12V operation and similar current ratings. Verify pinout alignment and package dimensions to confirm direct replacement feasibility without modifying the existing circuit board layout.