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Product Detailed Parameters
- Description：MOSFET P-CH 12V 3.8A SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：3.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：48mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：1028 pF @ 6 V
- FET Feature：-
- Power Dissipation (Max)：660mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-363
- Package / Case：6-TSSOP, SC-88, SOT-363
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Overview
The DMP1055USW-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -12V drain-source breakdown voltage and operates within a junction temperature range of -55°C to +150°C. The device provides a maximum continuous drain current of -3.8A at +25°C with a gate-source voltage of -4.5V. Its static drain-source on-resistance is specified as 48mΩ at VGS = -4.5V and ID = -3.0A, increasing to 59mΩ at VGS = -2.5V and 80mΩ at VGS = -1.8V. Total gate charge is typically 13nC at VGS = -4.5V. The component utilizes an SOT363 surface-mount package.
Feature Summary
- Low on-state resistance for high-efficiency power management
- Fast switching speed with low input capacitance
- Integrated ESD protection and gate protection diode
- Totally lead-free and fully RoHS compliant
Applications
- DC-DC Converters
- Power Management Functions
- Battery Operated Systems
- Solid-State Relays
- Drivers for Relays, Solenoids, Lamps, and Displays
Procurement Notes
Verify the specific ordering suffix when purchasing. The -13 suffix indicates packaging in reels of 10,000 units on tape. Confirm that the required quantity aligns with this reel size or check for alternative suffixes if smaller quantities are needed. Ensure the procurement channel is authorized to guarantee product authenticity and compliance with environmental directives.
Selection Notes
Select this component for applications requiring compact SOT363 packaging and efficient switching at low voltages. Consider the thermal resistance of 192°C/W for steady-state operation on FR-4 boards when calculating heat dissipation. Evaluate the gate threshold voltage characteristics against the driving logic levels to ensure reliable turn-on across the full operating temperature range.
Part Context
This part belongs to the DMP series of P-channel MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The device is intended for use in space-constrained environments where high efficiency and fast switching are critical requirements for power management circuits.
Replacement Considerations
DMP1055USW-7
FAQ
What is the maximum continuous drain current rating?
The maximum continuous drain current is -3.8A at a case temperature of +25°C with a gate-source voltage of -4.5V.
Does the device include internal protection features?
Yes, the DMP1055USW includes integrated ESD protection and an internal gate protection diode.
