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Product Detailed Parameters
- Description：MOSFET P-CH 12V 3.3A U-WLB1010-4
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：3.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：80mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：5 nC @ 4.5 V
- Vgs (Max)：-6V
- Input Capacitance (Ciss) (Max) @ Vds：350 pF @ 6 V
- FET Feature：-
- Power Dissipation (Max)：820mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-WLB1010-4
- Package / Case：4-UFBGA, WLBGA
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Overview
The DMP1080UCB4 is a P-Channel Enhancement Mode MOSFET manufactured by Diodes Incorporated. It utilizes LD-MOS technology to achieve an on-state resistance of 65mΩ at VGS = -4.5V and a total gate charge of 2.5nC. The device supports a drain-source voltage of -12V and a continuous drain current of -3.3A at +25°C. It operates within a temperature range of -55°C to +150°C and features ESD protection rated at 3kV HBM for the gate terminal.
Feature Summary
- LD-MOS technology designed to minimize on-state losses while maintaining superior switching performance
- Low turn-on potential enabled by a typical gate threshold voltage of -0.6V
- Ultra-fast switching capability supported by low total gate charge
- ESD protection rated at 3kV HBM for the gate terminal
Applications
- Battery management systems
- Load switches
- Battery protections
Procurement Notes
Verify that the component matches the exact part number DMP1080UCB4-7, as the datasheet indicates this specific package variant is not recommended for new designs. Confirm compliance with RoHS directives and ensure the supplier provides traceability documentation for automotive or high-reliability applications requiring AEC-Q standards.
Selection Notes
Select this component for power management circuits requiring low profile packaging and fast switching speeds. Evaluate thermal constraints carefully, as the U-WLB1010-4 package has limited power dissipation capabilities compared to larger footprints. Ensure the driving circuit can provide sufficient gate voltage to fully enhance the channel given the low threshold voltage specifications.
Part Context
This component belongs to the DMP series of P-Channel Enhancement Mode MOSFETs from Diodes Incorporated. It is packaged in a U-WLB1010-4 form factor, which measures 1.0mm by 1.0mm with a height of 0.62mm. The device is designed for high reliability and is compliant with JEDEC standards.
Replacement Considerations
Check for Q-suffix variants if automotive qualification (AEC-Q100/101/200) is required. Verify pinout compatibility when substituting with other P-Channel MOSFETs in the same voltage class.
