DMP1100UCB4-7

$0.57

Description：MOSFET P-CH 12V 2.5A WLB0808
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:b3be4e6bf272 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 12V 2.5A WLB0808
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：12 V
Current - Continuous Drain (Id) @ 25°C：2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.3V, 4.5V
Rds On (Max) @ Id, Vgs：83mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id：800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：820 pF @ 6 V
FET Feature：-
Power Dissipation (Max)：670mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：X2-WLB0808-4
Package / Case：4-XFBGA, WLBGA

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DMP1100UCB4-7

Overview

The DMP1100UCB4 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in an X2-WLB0808-4 package. It features a drain-source voltage of -12V and a typical on-resistance of 65mΩ at VGS=-4.5V. The device supports a continuous source current of -3.2A at +25°C and has a total gate charge of 9nC. Operating temperatures range from -55°C to +150°C.

Feature Summary

Ultra-small 0.8mm x 0.8mm package for space-constrained designs
Built-in G-S protection diode against ESD up to 2kV HBM
Qualified to AEC-Q101 standards for high reliability

Applications

Portable Applications
Load Switch
Power Management Functions

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000 units per tape and reel packaging configuration. Confirm that the component meets RoHS compliance and halogen-free requirements as defined by the manufacturer's green product standards before finalizing procurement specifications.

Selection Notes

Select this component when low on-state resistance and superior switching performance are required within a minimal footprint. Ensure the application operates within the specified -12V drain-source voltage limit and accounts for thermal dissipation characteristics in the X2-WLB0808-4 package.

Part Context

This part belongs to the DMP series of P-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It represents a new generation design focused on minimizing on-state resistance while maintaining high efficiency in power management applications.