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Product Detailed Parameters
- Description：MOSFET BVDSS: 8V~24V PowerDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：115A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
- Rds On (Max) @ Id, Vgs：3mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：83 nC @ 10 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：3840 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta), 52W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMP2004UFG is a 20V P-channel enhancement mode MOSFET designed for high-efficiency power management. It features an ultra-low on-state resistance of 3.0mΩ at VGS = -10V and supports a continuous drain current of -115A at TC = +25°C. The device utilizes the PowerDI3333-8 package, which occupies only 33% of the board area compared to SO-8 packages. Key electrical parameters include a gate-source voltage rating of ±12V, a maximum pulsed drain current of -180A, and a junction temperature range of -55°C to +150°C.
Feature Summary
- Minimizes on-state losses through exceptionally low RDS(ON) while maintaining superior switching performance.
- Small form factor thermally efficient package enables higher density end products.
- Occupies just 33% of the board area occupied by SO-8 enabling smaller end product.
- Lead-free finish; RoHS compliant and halogen/antimony free.
Applications
- Load switches
- Power management functions
Procurement Notes
Verify the specific ordering suffix (e.g., -7 or -13) to confirm the required packing quantity and carrier type before procurement. Confirm that the application environment meets the specified thermal requirements for steady-state operation. Ensure the PCB layout matches the recommended pad dimensions for the PowerDI3333-8 package to achieve optimal thermal dissipation and electrical performance.
Selection Notes
Select this component when designing circuits requiring high current handling in a compact footprint. Evaluate the gate drive voltage against the RDS(ON) specifications to ensure optimal efficiency. Consider the thermal resistance values relative to the expected ambient temperature and duty cycle to prevent exceeding the maximum junction temperature during operation.
Part Context
This part belongs to Diodes Incorporated's portfolio of power MOSFETs optimized for space-constrained applications. The PowerDI series focuses on reducing board area while maximizing thermal performance. The DMP2004UFG specifically targets designs needing robust P-channel switching capabilities with minimal conduction losses.
Replacement Considerations
Check datasheets for alternative P-channel MOSFETs with similar voltage ratings and current capacities. Verify pinout compatibility and package dimensions if substituting directly. Compare thermal resistance and on-resistance characteristics to ensure equivalent performance in the target application.
FAQ
What is the maximum continuous drain current?
The maximum continuous drain current is -115A at a case temperature of +25°C.
Is this device suitable for automotive applications?
For automotive applications requiring specific change control, AEC-Q100 qualification, PPAP capability, and IATF 16949 manufacturing, contact Diodes Incorporated directly.
