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Product Detailed Parameters
- Description：MOSFET P-CH 20V 89A POWERDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：89A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：4mOhm @ 15A, 4.5V
- Vgs(th) (Max) @ Id：900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：125 nC @ 10 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：4670 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：2.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMP2005UFG-7 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 surface-mount package. It features a drain-source breakdown voltage of -20V and a maximum continuous drain current of -89A at case temperature +25°C. The device exhibits a low on-state resistance of 4.0mΩ max at VGS = -4.5V and 6.5mΩ max at VGS = -2.5V. Total gate charge is 55nC at VGS = -4.5V. Operating temperatures range from -55°C to +150°C.
Feature Summary
- Low on-state resistance minimizes conduction losses for high-efficiency power management.
- PowerDI3333-8 package provides thermal efficiency and occupies significantly less board area than SO-8.
- Qualified to AEC-Q101 standards for automotive reliability.
- Lead-free finish with halogen and antimony-free green compound.
Applications
- Load switching
- Power management functions
Procurement Notes
Verify the specific ordering suffix (e.g., -7 or -13) against the required tape and reel quantity before procurement. Confirm that the application environment remains within the specified junction temperature limits and that the PCB layout adheres to the recommended pad dimensions for optimal thermal performance.
Selection Notes
Select this component for applications requiring compact form factors and high current handling capabilities in 20V systems. Evaluate the gate drive voltage requirements, as on-resistance varies significantly between -2.5V and -4.5V thresholds. Ensure the design accounts for the thermal resistance characteristics under steady-state conditions.
Part Context
This part belongs to the DMP series of P-channel MOSFETs designed by Diodes Incorporated. It utilizes silicon technology and is intended for general-purpose power switching. The PowerDI packaging family focuses on reducing footprint while maintaining robust thermal dissipation properties suitable for dense electronic assemblies.
Replacement Considerations
No public confirmed substitute part numbers are documented in the provided datasheet.
FAQ
What is the maximum continuous drain current rating?
The maximum continuous drain current is -89A at a case temperature of +25°C and -70A at a case temperature of +70°C.
Is this component compliant with environmental directives?
Yes, it is lead-free, RoHS compliant, and defined as a 'Green' device containing less than 900ppm bromine and chlorine combined, and less than 1000ppm antimony compounds.
