DMP2008USS-13

Overview

The DMP2008USS-13 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in an SO-8 surface-mount package. It features a drain-source voltage (V_DSS) of -20 V and a continuous drain current (I_D) of -13 A at +25°C ambient temperature. The device exhibits low on-state resistance (R_DS(ON)), with maximum values of 9 mΩ at V_GS = -4.5 V, 11 mΩ at V_GS = -2.5 V, and 16 mΩ at V_GS = -1.8 V. Key electrical parameters include a gate-source voltage rating of ±8 V, a pulsed drain current of -110 A, and a total power dissipation of 1.4 W in steady state under standard PCB mounting conditions.

Feature Summary

• Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency applications.
• Manufactured as a totally lead-free and fully RoHS compliant component that is also halogen and antimony free.
• Subjected to 100% unclamped inductive switching (UIS) testing in production to ensure reliability.

Applications

• Load switches
• Power-management functions

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the tape and reel packing quantity of 2500 units when sourcing. Confirm compliance requirements such as RoHS 3 and halogen-free status against project specifications. Ensure the SO-8 package dimensions align with the suggested pad layout provided in the datasheet to prevent assembly defects. Validate thermal management strategies based on the specified junction-to-ambient thermal resistance values.

Selection Notes

Select this component for circuits requiring a -20 V P-channel switch with high current handling capabilities up to -13 A. Consider the low R_DS(ON) characteristics for minimizing conduction losses in power management topologies. Evaluate the thermal performance using the provided transient thermal resistance data for pulsed applications. Ensure the gate drive voltage meets the threshold requirements for optimal R_DS(ON) performance across the operating temperature range.

Part Context

This part belongs to the DMP2008USS series of P-channel MOSFETs manufactured by Diodes Incorporated. The series is engineered for general-purpose power switching applications where low on-resistance and fast switching speeds are critical. The SO-8 package provides a compact solution for surface-mount technology assemblies, balancing thermal performance with board space constraints.

Replacement Considerations

Consult the manufacturer's documentation for qualified alternatives within the same product family or cross-reference compatible parts with matching voltage, current, and package specifications.

FAQ

What is the maximum pulsed drain current for the DMP2008USS-13?

The maximum pulsed drain current is -110 A, defined by a 10 μs pulse duration with a 1% duty cycle.

Is the DMP2008USS-13 suitable for automotive applications?

For automotive applications requiring specific change control, AEC-Q100/101/104/200 qualification, PPAP capability, and IATF 16949 manufacturing, customers must contact Diodes Incorporated directly.