ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET P-CH 20V 50A POWERDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：9.5mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：103 nC @ 10 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：3350 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI3333-8
- Package / Case：8-PowerVDFN
Download product information
Overview
The DMP2010UFV-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -20V drain-source breakdown voltage and a maximum continuous drain current of -50A at +25°C case temperature. The device exhibits a low on-state resistance of 9.5mΩ at VGS = -4.5V and 12.5mΩ at VGS = -2.5V. It is housed in a PowerDI3333-8 (Type UX) surface-mount package, designed for high efficiency power management applications.
Feature Summary
- Low RDS(ON) minimizes on-state losses
- Small form factor thermally efficient package enables higher density end products
- Occupies just 33% of the board area occupied by SO-8 enabling smaller end product
Applications
- Load Switch
- Power Management Functions
Procurement Notes
Verify the specific ordering suffix to confirm packaging quantity. The -13 suffix indicates a tape and reel quantity of 3000 units. Confirm compliance with RoHS directives and ensure the component meets halogen-free requirements as specified in the manufacturer documentation before finalizing procurement specifications.
Selection Notes
Select this component when designing circuits requiring a compact P-channel switch with high current handling capabilities. The PowerDI3333-8 package provides superior thermal performance compared to traditional packages while significantly reducing footprint. Ensure gate drive voltages align with the specified thresholds for optimal switching performance and minimal conduction losses.
Part Context
This part belongs to the DMP series of P-channel MOSFETs from Diodes Incorporated. It utilizes the PowerDI3333-8 (Type UX) package, which is engineered to provide enhanced thermal dissipation within a minimal surface area. The series is targeted at modern portable electronics and power management systems where space constraints and efficiency are critical design parameters.
Replacement Considerations
Check datasheets for alternative P-channel MOSFETs with similar -20V ratings and comparable RDS(ON) values. Verify that any substitute maintains the same PowerDI3333-8 footprint and pinout configuration to ensure direct compatibility without PCB redesign.
