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The DMP2012SN-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -20V drain-source voltage (BVDSS) and a maximum continuous drain current of -0.9A at +25°C ambient temperature. The device offers low on-state resistance, specified as 0.3Ω max at VGS = -4.5V and 0.5Ω max at VGS = -2.5V. It operates within a junction temperature range of -55°C to +150°C and dissipates up to 500mW of power. Packaged in an SC-59 (SOT-23-3) surface-mount housing, it includes an ESD protected gate structure.
Verify the specific ordering suffix '-7' corresponds to the standard tape and reel packaging configuration containing 3000 units per carrier. Confirm that the component meets the required environmental standards, specifically RoHS 3 compliance and Halogen/Antimony-free definitions provided by the manufacturer. Ensure the SC-59 package dimensions align with the target PCB footprint layout requirements.
Select this component for applications requiring a compact P-channel switch with a -20V rating. Evaluate the thermal resistance of 250°C/W to ensure adequate heat dissipation for the 500mW power dissipation limit. Consider the gate threshold voltage range of -0.5V to -1.2V when designing the drive circuitry to ensure reliable switching at the intended logic levels.
This part belongs to the DMP series of P-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes the SC-59 surface-mount package, also known as SOT-23-3, which provides a small form factor suitable for space-constrained designs. The device is designed to balance low on-state resistance with superior switching performance.
Consult official Diodes Incorporated documentation or authorized distributors for confirmed substitute part numbers. Verify pinout compatibility and electrical parameter equivalence before implementation.
The maximum pulsed drain current (IDM) is -2.8A, subject to a pulse width of ≤10µS and a duty cycle of ≤1%.
Yes, the device features an ESD protected gate structure to enhance reliability against electrostatic discharge events.