DMP2016UFDE-13

DMP2016UFDE-13

$0.12
  • Description:IC
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)

SKU:285de74c1fc8 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:9.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs:15mOhm @ 7A, 4.5V
  • Vgs(th) (Max) @ Id:1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:30 nC @ 8 V
  • Vgs (Max):±8V
  • Input Capacitance (Ciss) (Max) @ Vds:1710 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):900mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:U-DFN2020-6 (Type E)
  • Package / Case:6-PowerUDFN

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DMP2016UFDE-13

Overview

The DMP2016UFDE-13 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a U-DFN2020-6 (Type E) package. It features a drain-source voltage of -20V and a maximum continuous drain current of -9.5A at +25°C. The device offers a low on-resistance of 15mΩ at VGS = -4.5V and 19mΩ at VGS = -2.5V. Key electrical parameters include a gate threshold voltage ranging from -0.35V to -1.1V, total gate charge of 17nC at VGS = -4.5V, and a junction temperature range of -55°C to +150°C.

Feature Summary

  • Low profile design with a 0.6mm height for space-constrained applications
  • Minimized on-state resistance to ensure high efficiency in power management
  • ESD-protected gate structure for enhanced reliability
  • Totally lead-free and fully RoHS compliant construction

Applications

  • Battery-management systems
  • Power-management functions
  • DC-DC converters

Procurement Notes

Verify the specific ordering suffix against official documentation before procurement. Confirm that the required packing quantity aligns with standard tape and reel options. Ensure compliance with applicable environmental directives such as RoHS 3. Validate that the component meets all necessary automotive or industrial standards if intended for regulated environments.

Selection Notes

Select this component when a compact footprint and low on-resistance are critical for P-channel switching applications. Evaluate thermal performance based on the specified junction-to-ambient resistance values under your specific PCB copper layout conditions. Consider the gate threshold voltage range to ensure compatibility with your control logic levels.

Part Context

This part belongs to Diodes Incorporated's portfolio of P-channel enhancement mode MOSFETs designed for high-efficiency power management. The U-DFN2020-6 package provides a small PCB footprint while maintaining robust thermal characteristics suitable for modern electronic designs requiring reliable switching performance.

Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Cross-reference pinouts, electrical ratings, and package dimensions carefully. Ensure any replacement maintains equivalent or superior performance specifications for your specific application requirements.

FAQ

What is the maximum continuous drain current rating?

The maximum continuous drain current is -9.5A at an ambient temperature of +25°C.

Is the gate protected against electrostatic discharge?

Yes, the device features an ESD-protected gate structure.

What is the operating temperature range?

The operating and storage temperature range is from -55°C to +150°C.

DMP2016UFDE-13DMP2016UFDE-13
$0.12
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