DMP2018LFK-7

$0.41

Description：MOSFET P-CH 20V 9.2A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:824b17d8610c Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 9.2A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：9.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：16mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id：1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs：113 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：4748 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2523-6
Package / Case：6-PowerUDFN

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DMP2018LFK-7

Overview

The DMP2018LFK-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2523-6 surface-mount package with a drain-source voltage (Vdss) of -20 V and a maximum continuous drain current (Id) of -9.2 A at steady state (TA = 25°C). The device exhibits a low on-state resistance (Rds(on)) of 16 mΩ max at Vgs = -4.5 V and 25 mΩ max at Vgs = -2.0 V. Total gate charge (Qg) is 113 nC max at Vgs = -10 V, with an input capacitance (Ciss) of 4748 pF max. Operating temperature range spans from -55°C to +150°C junction temperature.

Feature Summary

Low on-state resistance for high efficiency power management
ESD protected gate up to 2kV
Qualified to AEC-Q101 standards for automotive reliability

Applications

DC-DC converters
Power management functions
Notebook PC applications
Portable equipment applications

Procurement Notes

Verify the specific ordering suffix when purchasing. The '-7' suffix indicates a tape and reel packaging quantity of 3,000 units per reel. Confirm that the required component matches the U-DFN2523-6 case outline dimensions and pad layout specifications provided in the datasheet before finalizing procurement orders.

Selection Notes

Select this component for designs requiring a compact footprint with robust current handling capabilities. Ensure the gate drive voltage meets the minimum threshold requirements for optimal Rds(on) performance. Verify thermal dissipation calculations against the specified thermal resistance values for the intended PCB copper area and mounting configuration.

Part Context

This part belongs to the DMP2018LFK series of P-channel MOSFETs designed for low-voltage switching applications. It utilizes a 'Green' molding compound and complies with RoHS directives. The device is specifically engineered to minimize on-state resistance while maintaining superior switching performance characteristics suitable for modern portable electronics.