DMP2022LSSQ-13

$1.12

Description：MOSFET P-CH 20V 9.3A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:a7d2249ee9c9 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 9.3A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：9.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
Rds On (Max) @ Id, Vgs：13mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：60.2 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：2575 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：1.6W (Ta)
Operating Temperature：-55°C ~ 155°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMP2022LSSQ-13

Overview

The DMP2022LSSQ-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -20V drain-source voltage rating and an SO-8 surface-mount package. The device provides a maximum continuous drain current of -9.3A at +25°C ambient temperature, with a pulsed drain current capability of -35A. Static drain-source on-resistance is specified as 13mΩ at VGS = -10V and 16mΩ at VGS = -4.5V. Total power dissipation is rated at 1.6W, supported by a thermal resistance from junction to ambient of 74°C/W.

Feature Summary

Designed for high efficiency power management applications through minimized on-state resistance and superior switching performance.
Qualified to AEC-Q101 standards for automotive reliability and capable of PPAP submission.
Compliant with RoHS directives and halogen/antimony-free green manufacturing standards.

Applications

Backlighting circuits
Power management functions
DC-DC converters

Procurement Notes

Verify the component matches the specific datasheet revision DS36875 Rev. 3 - 2. Confirm that the SO-8 package dimensions align with the provided mechanical data table. Ensure the ordering suffix indicates tape and reel packaging for the required quantity. Validate compliance requirements against the latest environmental declarations.

Selection Notes

Select this component when a low-voltage P-channel switch is required for compact designs. The SO-8 package offers a balance between thermal performance and board space constraints. Consider the gate threshold voltage range for logic compatibility in control circuits. Evaluate the total gate charge specifications for driving requirements in switching applications.

Part Context

This part belongs to the DMP series of P-channel MOSFETs from Diodes Incorporated. The series focuses on providing low on-resistance within small surface-mount packages. The SO-8 variant specifically targets applications requiring moderate current handling in constrained physical spaces compared to larger leaded packages.

Replacement Considerations

Cross-reference with other Diodes Incorporated P-channel MOSFETs in the SO-8 package. Verify pinout compatibility and electrical ratings before substitution. Check for equivalent AEC-Q101 qualification if automotive use is intended.