DMP2033UCB9-7

DMP2033UCB9-7

  • Description:MOSFET P-CH 20V 4.2A U-WLB1515-9
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)

SKU:fa7d075940c9 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET P-CH 20V 4.2A U-WLB1515-9
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:4.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs:33mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id:1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:7 nC @ 4.5 V
  • Vgs (Max):-6V
  • Input Capacitance (Ciss) (Max) @ Vds:500 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):1W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:U-WLB1515-9
  • Package / Case:9-UFBGA, WLBGA

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DMP2033UCB9-7

Overview

The DMP2033UCB9-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes LD-MOS technology to achieve an on-state resistance of 28 mΩ and a total gate charge of 5.4 nC. The device supports a drain-source voltage of -20 V and continuous drain currents up to -5.8 A at +25°C. It operates within a temperature range of -55°C to +150°C and features ESD protection rated at 3 kV HBM for the gate terminal.

Feature Summary

  • LD-MOS technology minimizes on-state losses while maintaining ultra-fast switching performance
  • Low gate threshold voltage enables low turn-on potential operation
  • Compact CSP package with a footprint of 1.5mm x 1.5mm and height of 0.62mm
  • Gate terminal protected against electrostatic discharge up to 3kV HBM

Applications

  • Battery management systems
  • Load switch circuits
  • Battery protection modules

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the U-WLB1515-9 case style matches the required PCB footprint dimensions. Ensure compliance with RoHS and halogen-free requirements if specified for the target assembly process.

Selection Notes

Select this component when low profile and small footprint are critical constraints. The low gate threshold voltage suits applications requiring efficient drive from low-voltage logic sources. Verify thermal dissipation capabilities against the expected duty cycle and ambient operating conditions.

Part Context

This part belongs to the DMP2033 series of P-channel MOSFETs. It shares similar electrical characteristics with other variants in the family but differs in physical packaging. The UCB9 designation indicates the specific U-WLB1515-9 surface mount case used for this product line.

Replacement Considerations

DMP2033UVT-7

FAQ

What is the maximum static drain-source on-resistance?

The maximum RDS(on) is 45 mΩ when tested at VGS = -2.5V and ID = -2A.

Is the device qualified for automotive applications?

Yes, the component is qualified to AEC-Q101 standards for high reliability.

DMP2033UCB9-7DMP2033UCB9-7

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