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The DMP2033UCB9-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes LD-MOS technology to achieve an on-state resistance of 28 mΩ and a total gate charge of 5.4 nC. The device supports a drain-source voltage of -20 V and continuous drain currents up to -5.8 A at +25°C. It operates within a temperature range of -55°C to +150°C and features ESD protection rated at 3 kV HBM for the gate terminal.
Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the U-WLB1515-9 case style matches the required PCB footprint dimensions. Ensure compliance with RoHS and halogen-free requirements if specified for the target assembly process.
Select this component when low profile and small footprint are critical constraints. The low gate threshold voltage suits applications requiring efficient drive from low-voltage logic sources. Verify thermal dissipation capabilities against the expected duty cycle and ambient operating conditions.
This part belongs to the DMP2033 series of P-channel MOSFETs. It shares similar electrical characteristics with other variants in the family but differs in physical packaging. The UCB9 designation indicates the specific U-WLB1515-9 surface mount case used for this product line.
DMP2033UVT-7
The maximum RDS(on) is 45 mΩ when tested at VGS = -2.5V and ID = -2A.
Yes, the component is qualified to AEC-Q101 standards for high reliability.