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Product Detailed Parameters
- Description：MOSFET P-CH 20V 6.6A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：6.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：24mOhm @ 8A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：44 nC @ 8 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：2200 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：740mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN1616-6 (Type K)
- Package / Case：6-PowerUFDFN
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Overview
The DMP2035UFCL-7 is a -20V P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes a U-DFN1616-6 surface-mount package with a 2.56mm² PCB footprint. The device achieves an on-state resistance of 24mΩ at VGS = -4.5V and 31mΩ at VGS = -2.5V, supporting continuous drain currents of -6.6A at +25°C. Key electrical parameters include a gate-source voltage rating of ±8V, a maximum body diode forward current of -1.7A, and a total gate charge of 29nC at VGS = -8V. Thermal characteristics specify a junction-to-ambient resistance of 169°C/W on FR-4 substrate.
Feature Summary
- Minimized on-state resistance to reduce conduction losses while maintaining switching performance
- ESD protected gate structure rated for 2kV
- Totally lead-free and fully RoHS compliant construction
- Qualified to AEC-Q101 standards for high reliability
Applications
- Power management functions
- Analog switches
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the U-DFN1616-6 case material meets the required UL flammability classification rating of 94V-0. Ensure compatibility with the specified NiPdAu finish over copper leadframe for solderability per MIL-STD-202 Method 208.
Selection Notes
Select this component when low thermal resistance and compact board space are critical constraints due to its small 2.56mm² footprint. Consider the AEC-Q101 qualification if automotive or high-reliability environments are required. Evaluate the 2kV ESD protection capability for applications sensitive to electrostatic discharge events during handling or operation.
Part Context
This part belongs to the DMP2035 series of P-channel enhancement mode MOSFETs from Diodes Incorporated. It represents a newer generation design focused on minimizing on-state resistance compared to previous iterations. The device is distinct from other packages in the family, specifically utilizing the U-DFN1616-6 form factor for optimized thermal and spatial performance.
Replacement Considerations
Direct substitutes within the same manufacturer family include the DMP2035UVT-7, which shares identical electrical specifications but utilizes a different SOT-23-3 package. Verify pinout compatibility and thermal dissipation requirements before substituting between package types.
