DMP2035UQ-7

$0.55

Description：MOSFET BVDSS: 8V~24V SOT23 T&R 3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:3c504f1613e4 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 8V~24V SOT23 T&R 3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：4.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：35mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：15.4 nC @ 4.5 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：1610 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：810mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMP2035UQ-7

Overview

The DMP2035UQ-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (VDSS) of -20 V and a continuous drain current (ID) of -4.9 A at +25°C. The device exhibits low on-resistance, with maximum values ranging from 23 mΩ to 62 mΩ depending on gate-source voltage and drain current conditions. Total gate charge is typically 15.4 nC. It operates within a temperature range of -55°C to +150°C and is housed in an SOT-23 package.

Feature Summary

Low on-resistance for efficient power handling
Fast switching speed with low input capacitance
ESD protected with integrated gate protection diode
Totally lead-free and fully RoHS compliant

Applications

Load switch applications
Power management circuits
Low voltage applications

Procurement Notes

Verify the specific ordering suffix 'Q' against official Diodes Incorporated documentation to confirm its exact meaning regarding packaging or quality grade. Confirm that the standard DMP2035U-7 datasheet applies to this variant. Ensure compliance with automotive standards if required for the intended application.

Selection Notes

Select based on the -20 V rating and -4.9 A continuous current capability. Consider the thermal resistance of 153.5 °C/W for heat dissipation requirements. Evaluate the gate threshold voltage characteristics for compatibility with control logic levels. Verify package dimensions match the PCB layout constraints.

Part Context

This component belongs to the DMP2035U series of P-channel enhancement mode MOSFETs. It is designed to minimize on-state resistance while maintaining superior switching performance. The series includes variants like DMP2035U-7 and DMP2035U-13, all sharing similar electrical characteristics but differing in packaging quantities.