DMP2038USS-13

$0.51

Description：MOSFET P-CH 20V 6.5A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:631bd2dad517 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 6.5A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：38mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id：1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14.4 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：1496 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMP2038USS-13

Overview

The DMP2038USS-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -20V drain-source breakdown voltage and a maximum continuous drain current of -6.5A at +25°C. The device exhibits low on-state resistance, specified as 38mΩ max at VGS = -4.5V and 56mΩ max at VGS = -2.5V. Packaged in an SO-8 surface-mount case, it is designed for high efficiency power management applications.

Feature Summary

Low on-resistance to minimize conduction losses
Fast switching speed with low input capacitance
Qualified to AEC-Q101 standards for automotive reliability
Totally lead-free and fully RoHS compliant

Applications

Backlighting circuits
Power management functions
DC-DC converters

Procurement Notes

Verify the component datasheet revision and specific ordering suffixes before procurement. Confirm that the SO-8 package dimensions match the target PCB footprint. Ensure compliance with environmental directives such as RoHS and halogen-free requirements if applicable to the final assembly process.

Selection Notes

Select this component for designs requiring a -20V P-channel MOSFET with moderate current handling capabilities. Evaluate the thermal resistance and power dissipation limits relative to the operating environment. Consider the gate threshold voltage range to ensure compatibility with the intended logic or driver levels.

Part Context

This part belongs to the DMP2038USS series of P-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes an SO-8 surface-mount package suitable for automated assembly processes. The device is engineered to balance low on-state resistance with superior switching performance for efficient power control.