DMP2040UND-7

$0.18

Description：MOSFET 2P-CH 20V 5.3A PWRDI3333
Series：-

SKU:32369729cea5 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 20V 5.3A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：5.3A (Ta), 13.6A (Tc)
Rds On (Max) @ Id, Vgs：36mOhm @ 8.9A, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：834pF @ 10V
Power - Max：900mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerVDFN
Supplier Device Package：PowerDI3333-8 (Type UXB)
Grade：-
Qualification：-

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DMP2040UND-7

Overview

The DMP2040UND-7 is a dual P-channel enhancement mode MOSFET in a POWERDI3333-8 package. It features a -20V drain-source voltage rating and low on-resistance of 36mΩ at VGS=-4.5V, supporting -5.3A continuous drain current. The device offers fast switching with low gate charge (9.6nC) and input capacitance (834pF). Operating temperature ranges from -55°C to +150°C.

Feature Summary

Dual P-channel configuration for space-efficient designs
Low on-resistance for high efficiency power management
Fast switching speed with low gate charge
Totally lead-free and fully RoHS compliant

Applications

Backlighting circuits
Power management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix matches the required tape and reel quantity. Confirm that the component meets all applicable environmental directives and quality standards relevant to the target application before finalizing procurement specifications.

Selection Notes

Select this component for applications requiring compact dual P-channel solutions with low conduction losses. Ensure the operating voltage does not exceed the -20V limit and consider thermal resistance values when designing heat dissipation strategies for steady-state operations.

Part Context

This part belongs to Diodes Incorporated's advanced generation MOSFET lineup designed to minimize on-state resistance while maintaining superior switching performance. It utilizes the POWERDI3333-8 surface-mount package to provide efficient thermal management and reduced footprint compared to traditional packages.

Replacement Considerations

Check datasheets for alternative dual P-channel MOSFETs with compatible -20V ratings and similar RDS(ON) characteristics. Verify pinout compatibility and thermal performance metrics to ensure seamless integration into existing circuit designs without modification.

FAQ

What is the maximum continuous drain current for this device?

The maximum continuous drain current is -5.3A at TA = +25°C and -4.2A at TA = +70°C.

Is this component suitable for automotive applications?

For automotive applications requiring specific change control or AEC-Q100/101/200 qualification, contact Diodes Incorporated directly as standard parts may not meet these specific requirements.