DMP2040USD-13

$0.59

Description：MOSFET 2P-CH 20V 6.5A 8SO
Series：-

SKU:7783b81567e3 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 20V 6.5A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：6.5A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs：33mOhm @ 8.9A, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：19nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds：834pF @ 10V
Power - Max：1.1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：-
Qualification：-

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DMP2040USD-13

Overview

The DMP2040USD-13 is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated in an SO-8 surface-mount package. It features a drain-source voltage rating of -20V and a continuous drain current of -6.5A at +25°C. The device offers a maximum on-resistance of 33mΩ at VGS = -4.5V and 52mΩ at VGS = -2.5V. Key electrical parameters include a gate-source voltage limit of ±12V, a total power dissipation of 1.1W, and a junction-to-ambient thermal resistance of 108°C/W. Operating temperatures range from -55°C to +150°C.

Feature Summary

Dual P-channel configuration for efficient power management
Low on-state resistance to minimize conduction losses
Fast switching speed with low input capacitance
Totally lead-free and fully RoHS compliant

Applications

Backlighting circuits
Power management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2500-unit tape and reel packaging format. Confirm that the component meets all applicable environmental directives, including RoHS compliance and halogen-free requirements, as specified in the manufacturer's documentation. Ensure compatibility with standard SO-8 footprint layouts during procurement planning.

Selection Notes

Select this component for applications requiring dual P-channel control within a compact SO-8 footprint. Evaluate the thermal performance against the 108°C/W junction-to-ambient resistance, particularly for steady-state operations on FR-4 substrates. Consider the -20V breakdown voltage and -6.5A continuous current limits when designing power stages to ensure reliable operation under expected load conditions.

Part Context

This part belongs to the DMP2040 series of advanced generation MOSFETs designed to balance low on-resistance with superior switching performance. Manufactured by Diodes Incorporated, it utilizes a molded plastic case with matte tin annealed terminals. The product marking includes the code 'P2040UD' along with date codes for traceability.

Replacement Considerations

Direct substitutes include other dual P-channel MOSFETs in SO-8 packages with comparable -20V ratings and similar RDS(ON) specifications. Verify pinout compatibility and thermal characteristics before substitution.

FAQ

What is the maximum gate-source voltage rating?

The absolute maximum gate-source voltage (VGSS) is rated at ±12V.

How does the on-resistance vary with temperature?

The on-resistance increases as the junction temperature rises, as illustrated in the typical on-resistance vs. junction temperature graphs provided in the datasheet.