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Product Detailed Parameters
- Description：MOSFET P-CH 20V 4.3A SOT23
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：4.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：45mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6.8 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：634 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：800mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMP2045U-13 is a P-channel enhancement mode MOSFET in an SOT-23 package. It features a drain-source voltage (BVDSS) of -20V and a maximum continuous drain current (ID) of -4.3A at +25°C. The device offers low on-state resistance, specified as 45mΩ max at VGS = -4.5V and ID = -4.0A, or 58mΩ max at VGS = -2.5V and ID = -3.5A. Total gate charge (Qg) is typically 6.8nC at VGS = -4.5V and VDS = -10V. Thermal characteristics include a junction-to-ambient thermal resistance (RθJA) of 154°C/W steady state on FR-4 substrate.
Feature Summary
- Low on-resistance for high efficiency power management
- Fast switching speed with low input capacitance
- ESD protected gate structure
- Totally lead-free and fully RoHS compliant
Applications
- DC-DC Converters
- Power Management Functions
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000 units per tape and reel packaging configuration. Confirm that the standard compliance version matches the application requirements, noting that automotive-compliant variants are available under separate datasheets such as DMP2045UQ. Ensure the sourcing channel provides original manufacturer documentation.
Selection Notes
Select this component when a compact SOT-23 footprint is required for P-channel switching applications operating within a 20V limit. The device is suitable for designs prioritizing low conduction losses at moderate drive voltages (-2.5V to -4.5V). Evaluate the thermal performance against the 154°C/W junction-to-ambient resistance for the intended PCB copper area.
Part Context
This part belongs to the Diodes Incorporated DMP series of P-channel enhancement mode MOSFETs. It utilizes a standard SOT-23 case material made from molded plastic with a matte tin annealed finish over a copper leadframe. The device is designed to minimize on-state resistance while maintaining superior switching performance.
Replacement Considerations
For automotive applications requiring specific change control, AEC-Q100/101 qualification, and IATF 16949 manufacturing, contact the manufacturer for the DMP2045UQ variant.
