DMP2065UQ-7

$0.41

Description：MOSFET BVDSS: 8V~24V SOT23 T&R 3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:b8564a467441 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 8V~24V SOT23 T&R 3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：60mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id：900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10.2 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：808 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：900mW
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMP2065UQ-7

Overview

The DMP2065UQ is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -20V drain-source breakdown voltage and a maximum continuous drain current of -4.0A at +25°C. The device offers low on-state resistance, specified as 60mΩ max at VGS = -4.5V and 90mΩ max at VGS = -2.5V. Packaged in an SOT-23 surface-mount case, it supports a total power dissipation of 0.9W with a thermal resistance of 138°C/W. Operating temperatures range from -55°C to +150°C junction temperature.

Feature Summary

Low on-resistance design for high-efficiency power management
Low gate threshold voltage enabling fast switching speeds
Low input capacitance and leakage characteristics
Qualified for automotive applications under AEC-Q101 standards

Applications

High-efficiency power management circuits
Automotive electronic systems requiring specific change control
Load switching applications

Procurement Notes

Verify the component matches the exact part number DMP2065UQ-7 or DMP2065UQ-13 to ensure correct packaging quantities. Confirm that the supplier provides documentation proving AEC-Q101 qualification and IATF 16949 manufacturing compliance if automotive use is intended. Check RoHS and Halogen-free status against project requirements.

Selection Notes

Select this component when a compact SOT-23 package is required for P-channel switching with a -20V rating. Consider the low gate threshold voltage (-0.9V max) for compatibility with lower drive voltages. Evaluate the thermal resistance and power dissipation limits relative to the expected ambient temperature and PCB copper area for adequate heat sinking.

Part Context

This device belongs to the DMP series of P-channel enhancement mode MOSFETs produced by Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The product line targets applications demanding high efficiency and reliability in small form factors.

Replacement Considerations

Check datasheets for alternative P-channel MOSFETs with similar -20V ratings and comparable RDS(ON) values in SOT-23 packages. Ensure any substitute meets the same AEC-Q101 qualification and pinout configuration.

FAQ

Is the DMP2065UQ suitable for automotive applications?

Yes, the DMP2065UQ is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications requiring specific change control.