DMP2067LVT-7

$0.42

Description：MOSFET P-CH 20V 4.2A TSOT26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:45405f7aaff6 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 4.2A TSOT26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：45mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：28 nC @ 8 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：1575 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：1.2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TSOT-26
Package / Case：SOT-23-6 Thin, TSOT-23-6

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DMP2067LVT-7

Overview

The DMP2067LVT-7 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a TSOT26 surface-mount package. It features a drain-source voltage (V_DSS) of -20 V and a continuous drain current (I_D) of -4.2 A at +25°C. The device offers low on-state resistance, specified as a maximum of 45 mΩ at V_GS = -4.5 V and 65 mΩ at V_GS = -2.5 V. Total gate charge is typically 15 nC at V_GS = -4.5 V. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Low on-resistance for high-efficiency power management
Low gate threshold voltage for improved switching performance
Totally lead-free and fully RoHS compliant
Halogen and antimony free green device

Applications

General purpose interfacing switch
Power management functions

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Confirm that the component meets all applicable environmental directives, including RoHS and REACH requirements, prior to integration into final assemblies.

Selection Notes

Select this component when a compact P-channel MOSFET with low R_DS(ON) is required for space-constrained designs. Ensure the application gate drive voltage aligns with the specified thresholds for optimal conduction characteristics and thermal performance within the stated operating range.

Part Context

This part belongs to the DMP2067 series of advanced P-channel MOSFETs designed by Diodes Incorporated. The series focuses on minimizing on-state resistance while maintaining superior switching capabilities, targeting modern power management applications requiring efficient energy conversion.

Replacement Considerations

Consult official manufacturer substitution guides for verified alternatives. Cross-referencing pinouts, electrical ratings, and package dimensions is essential before implementing any substitute components.