DMP2068UFY4Q-7

Overview

The DMP2068UFY4Q is a P-channel enhancement mode MOSFET designed for high-efficiency power management. It features a maximum drain-source voltage of -16V and low on-resistance values of 39mΩ at VGS=-4.5V, 65mΩ at VGS=-2.5V, and 103mΩ at VGS=-1.8V. The device supports continuous drain currents up to -4.8A at +25°C and operates within a temperature range of -55°C to +150°C. Packaged in an X2-DFN2015-3 format with NiPdAu terminals, it offers fast switching speeds and ESD protection.

Feature Summary

• Low on-resistance combined with superior switching performance for high efficiency
• ESD protected gate structure
• Totally lead-free and fully RoHS compliant construction

Applications

• Backlighting circuits
• Power-management functions
• DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the component meets AEC-Q101 qualification requirements if intended for automotive applications requiring specific change control protocols. Ensure compatibility with IATF 16949 certified manufacturing standards during the sourcing process.

Selection Notes

Select this component when a compact P-channel MOSFET with low on-resistance is required for space-constrained designs. The X2-DFN2015-3 package provides a small footprint suitable for dense PCB layouts. Consider the thermal resistance characteristics and junction temperature limits when designing for high-current or elevated temperature environments.

Part Context

This part belongs to Diodes Incorporated's generation of P-channel MOSFETs optimized for minimizing on-state resistance while maintaining fast switching capabilities. It utilizes an X2-DFN2015-3 package with molded plastic material classified as UL 94V-0. The device is manufactured in facilities certified under IATF 16949 standards.

Replacement Considerations

No public confirmed substitute part numbers are available.