DMP2070UFY4Q-7

$0.09

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:ff977b9be73a Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：4.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：54mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10.2 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：915 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：800mW
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：X2-DFN2015-3
Package / Case：3-XDFN

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DMP2070UFY4Q-7

Overview

The DMP2070UFY4Q is a P-channel enhancement mode MOSFET designed for automotive applications. It features a -20V drain-source voltage and low on-resistance of 54mΩ at VGS = -4.5V, supporting a continuous drain current of -4.7A at +25°C. The device utilizes an X2-DFN2015-3 package with NiPdAu terminals. It is AEC-Q101 qualified and PPAP capable, manufactured in IATF 16949 certified facilities.

Feature Summary

Low on-resistance for high efficiency power management
Fast switching speed with low input capacitance
ESD protected gate structure
Totally lead-free and fully RoHS compliant

Applications

Automotive backlighting systems
Power-management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the component meets the required AEC-Q101 qualification standards and PPAP documentation requirements for your specific automotive application context before finalizing procurement.

Selection Notes

Select this component when designing circuits requiring a -20V P-channel MOSFET with optimized on-resistance characteristics. Ensure the thermal design accommodates the specified junction-to-ambient resistance values based on the copper pad layout used in the target PCB assembly.

Part Context

This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio. It is specifically engineered to meet stringent automotive reliability standards. The X2-DFN2015-3 package provides a compact footprint suitable for space-constrained electronic control units and power distribution modules.