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Product Detailed Parameters
- Description：MOSFET P-CH 20V 3.8A TSOT26 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：3.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：75mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8.8 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：642 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TSOT-26
- Package / Case：SOT-23-6 Thin, TSOT-23-6
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Overview
The DMP2075UVT-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -20V drain-source breakdown voltage and a maximum continuous drain current of -3.8A at +25°C. The device exhibits a low on-state resistance of 75mΩ at VGS = -4.5V and 137mΩ at VGS = -2.5V. Packaged in a TSOT26 case, it includes an integrated gate protection diode and operates within a temperature range of -55°C to +150°C.
Feature Summary
- Minimized on-state resistance for high-efficiency power management
- Integrated gate protection diode
- Low input capacitance for superior switching performance
- ESD protected gate structure
Applications
- General purpose interfacing switch
- Power management functions
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets RoHS 2 and RoHS 3 directives as well as halogen and antimony-free requirements. Ensure compatibility with the specified TSOT26 mechanical dimensions and lead finish specifications during procurement.
Selection Notes
Select this component for applications requiring low on-resistance and fast switching speeds within a compact surface-mount package. Evaluate thermal dissipation capabilities against the junction-to-ambient thermal resistance values provided in the datasheet. Consider the gate threshold voltage characteristics for logic-level interface compatibility in power management circuits.
Part Context
This part belongs to the DMP2075 series of P-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a TSOT26 plastic molded case. The product line emphasizes low profile design and environmental compliance, targeting modern electronic systems where space constraints and efficiency are critical design parameters.
Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers. Cross-reference electrical parameters such as breakdown voltage, on-resistance, and package dimensions when evaluating alternative components.
