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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 3.2A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual) Common Source
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：3.2A (Ta)
- Rds On (Max) @ Id, Vgs：90mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：634pF @ 10V
- Power - Max：790mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UDFN Exposed Pad
- Supplier Device Package：U-DFN2020-6 (Type B)
- Grade：-
- Qualification：-
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Overview
The DMP2090UFDB-7 is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2020-6 (Type B) package with a maximum height of 0.6mm and a PCB footprint of 4mm². The device supports a drain-source voltage (V_DSS) of -20V and a continuous drain current (I_D) of -3.2A at +25°C. Static drain-drain on-resistance (R_DS(ON)) is specified at 90mΩ max at V_GS = -4.5V and 120mΩ max at V_GS = -2.5V. Total gate charge (Q_g) is typically 6.8nC.
Feature Summary
- Low profile construction with a maximum height of 0.6mm
- ESD protected gate structure for enhanced reliability
- Totally lead-free, fully RoHS compliant, and halogen/antimony free
Applications
- Load switches
- Power-management functions
- Portable power adaptors
Procurement Notes
Verify the specific ordering suffix to confirm packaging quantity. The DMP2090UFDB-7 variant is supplied in tape and reel carriers with a packing quantity of 3000 units. Confirm that the required component meets all applicable environmental directives and quality standards before finalizing procurement orders.
Selection Notes
Select this component for applications requiring a compact dual P-channel solution with low on-resistance. Ensure the design accommodates the thermal characteristics, specifically the junction-to-ambient thermal resistance values provided for different mounting conditions. Verify that the gate drive voltage levels align with the specified R_DS(ON) performance curves.
Part Context
This component belongs to the DMP series of dual P-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered to minimize on-state resistance while maintaining superior switching performance. The U-DFN2020-6 package provides a small form factor suitable for space-constrained portable electronics and high-efficiency power management designs.
Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers. Cross-reference electrical parameters such as V_DSS, I_D, and R_DS(ON) to ensure compatibility with existing circuit designs.
