DMP2104LP-7

DMP2104LP-7

$0.41
  • Description:MOSFET P-CH 20V 1.5A 3DFN1411
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:5f1fea75d916 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET P-CH 20V 1.5A 3DFN1411
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs:150mOhm @ 950mA, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):±12V
  • Input Capacitance (Ciss) (Max) @ Vds:320 pF @ 16 V
  • FET Feature:-
  • Power Dissipation (Max):500mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:DFN1411-3
  • Package / Case:3-UDFN

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DMP2104LP-7

Overview

The DMP2104LP-7 is a P-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It operates with a drain-source voltage of -20 V and a continuous drain current of -1.5 A at 25°C ambient temperature. The device features an ultra-small DFN1411-3 surface mount package. Electrical characteristics include a maximum gate threshold voltage of -1.0 V and a static drain-source on-resistance ranging from 92 mΩ to 240 mΩ depending on the gate-source voltage and drain current conditions. Power dissipation is rated at 500 mW, with a thermal resistance junction-to-ambient of 250 °C/W.

Feature Summary

  • P-channel MOSFET technology designed for low on-resistance and fast switching speed applications
  • Ultra-small DFN1411-3 surface mount package suitable for space-constrained designs
  • Qualified to AEC-Q101 standards ensuring high reliability for automotive environments
  • Low input capacitance and low leakage currents supporting efficient power management

Applications

  • Automotive electronic systems requiring high reliability components
  • Portable devices utilizing battery power sources
  • General purpose load switching applications
  • Power management circuits in consumer electronics

Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration before procurement. Confirm that the component meets all applicable environmental compliance standards relevant to your manufacturing region. Ensure that the supplier provides valid traceability documentation for the lot codes. Cross-reference the datasheet revision number to guarantee compatibility with your design specifications. Validate that the storage and handling procedures adhere to moisture sensitivity level requirements.

Selection Notes

Select this component when a compact P-channel MOSFET is required for low-voltage switching applications. Consider the thermal resistance and power dissipation limits relative to the expected operating ambient temperature. Evaluate the gate threshold voltage range to ensure compatibility with the driving logic levels available in the system. Assess the package dimensions against the printed circuit board layout constraints to ensure proper fitment and soldering.

Part Context

This part belongs to the DMP2104 series of P-channel enhancement mode field effect transistors produced by Diodes Incorporated. The series is characterized by its focus on low on-resistance and small form factor solutions. These transistors are engineered to provide robust performance in portable and automotive applications where space efficiency and reliability are critical design parameters.

Replacement Considerations

No public confirmed substitute part numbers are documented in the provided source material.

DMP2104LP-7DMP2104LP-7
$0.41
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