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Product Detailed Parameters
- Description：MOSFET P-CH 20V 2.1A SOT563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：2.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：150mOhm @ 950mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：320 pF @ 16 V
- FET Feature：-
- Power Dissipation (Max)：850mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-563
- Package / Case：SOT-563, SOT-666
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Overview
The DMP2104V-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT-563 surface-mount package. It features a drain-source voltage of -20 V and a continuous drain current of -1.9 A at +25°C. The device exhibits a maximum on-resistance of 150 mΩ at VGS = -4.5 V and -950 mA, or 200 mΩ at VGS = -2.5 V and -670 mA. Power dissipation is rated at 0.85 W with a thermal resistance of 146 °C/W. Operating temperature ranges from -55°C to +150°C junction temperature.
Feature Summary
- Totally lead-free and fully RoHS compliant construction
- Qualified to AEC-Q101 standards for high reliability
- Halogen and antimony free green device composition
- Ultra-small surface mount package design
Applications
- Backlighting circuits
- Power management functions
- DC-DC converters
- Motor control systems
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging configuration. Confirm that the component meets the required environmental specifications, including UL flammability rating 94V-0 and moisture sensitivity level 1 per J-STD-020 standards before finalizing procurement orders.
Selection Notes
Select this component for applications requiring low on-state resistance combined with superior switching performance. Ensure the gate-source voltage requirements align with the specified threshold characteristics. Verify that the thermal management strategy accommodates the 146 °C/W junction-to-ambient thermal resistance under steady-state operating conditions.
Part Context
This part belongs to the DMP2104 series of P-channel MOSFETs designed for high-efficiency power management. The device utilizes a molded plastic case with matte tin annealed terminals over a copper leadframe. It is intended for general-purpose switching applications where compact size and low conduction losses are critical design parameters.
Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers. Do not assume functional equivalence based solely on package type or generic electrical ratings without cross-referencing specific datasheet parameters.
FAQ
What is the maximum negative transient voltage capability on the source terminal?
The datasheet specifies a maximum negative transient voltage capability on the source terminal of -19.5 V.
Does the device include internal protection against cross-conduction?
No, the DMP2104V-7 is a discrete MOSFET and does not contain internal circuitry for cross-conduction prevention; external drive logic must manage timing.
