DMP2110UFDBQ-7

Overview

The DMP2110UFDBQ-7 is a dual P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a U-DFN2020-6 package. It features a drain-source voltage (V_DSS) of -20 V and a maximum continuous drain current (I_D) of -3.2 A at +25°C. The device offers a low on-resistance (R_DS(ON)) of 75 mΩ at V_GS = -4.5 V and 110 mΩ at V_GS = -2.5 V. Key electrical parameters include a gate threshold voltage (V_GS(TH)) ranging from -0.45 V to -1.0 V, total gate charge (Q_g) of 6.0 nC at V_GS = -4.5 V, and input capacitance (C_iss) of 443 pF. Thermal resistance (R_θJA) is 153 °C/W steady state.

Feature Summary

• Dual P-channel configuration designed for high-efficiency power management applications with minimized on-state resistance.
• AEC-Q101 qualified and PPAP capable, suitable for automotive applications requiring specific change control.
• Low profile construction with a maximum height of 0.6 mm and a compact PCB footprint of 4 mm².
• Totally lead-free, fully RoHS compliant, and halogen/antimony free green device.

Applications

• Load switches
• Power-management functions
• Portable power adaptors

Procurement Notes

Verify the component authenticity by checking the marking code 'H6' and date code format against the official datasheet specifications. Confirm that the ordering suffix '-7' corresponds to the standard 3,000-unit tape and reel packaging carrier. Ensure compliance with IATF 16949 manufacturing standards if the application requires automotive-grade qualification. Cross-reference the U-DFN2020-6 package dimensions with your PCB layout requirements.

Selection Notes

Select this component when a dual P-channel solution is required within a minimal 4 mm² footprint. The -20 V rating and -3.2 A current capacity suit low-voltage portable systems. Consider the 75 mΩ R_DS(ON) for efficiency-critical designs. Verify that the -0.45 V to -1.0 V threshold voltage aligns with your logic drive levels. The AEC-Q101 qualification makes it appropriate for automotive environments where specific change control is mandated.

Part Context

This part belongs to the DMP2110 series of dual P-channel MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is packaged in the U-DFN2020-6 (Type B) form factor. The product line emphasizes low on-resistance combined with superior switching performance for modern power management needs.

Replacement Considerations

DMP2110UFDBQ-13: Identical electrical characteristics and package; differs only in packing quantity (10,000 units per tape and reel).

FAQ

Is the DMP2110UFDBQ-7 qualified for automotive applications?

Yes, the DMP2110UFDBQ is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications requiring specific change control.

What is the maximum operating temperature range for this MOSFET?

The junction operating temperature (T_J) and storage temperature (T_STG) range from -55°C to +150°C.