DMP2110UW-7

$0.32

Description：MOSFET P-CH 20V 2A SOT323
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:3111b1f29c1c Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 2A SOT323
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：100mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id：900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：6 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：443 pF @ 6 V
FET Feature：-
Power Dissipation (Max)：490mW
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-323
Package / Case：SC-70, SOT-323

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DMP2110UW-7

Overview

The DMP2110UW-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -20V drain-source breakdown voltage and a maximum continuous drain current of -2.0A at +25°C. The device offers a low on-state resistance, with RDS(ON) specified as 100mΩ max at VGS = -4.5V and ID = -1.5A. It utilizes an SOT323 surface-mount package.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management applications.
Features low input capacitance and fast switching speed characteristics.
Compliant with RoHS directives and is halogen and antimony free.

Applications

Motor Control
Power Management Functions
Backlighting

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging quantity and type. Confirm that the component meets all required environmental compliance standards for the target application. Ensure compatibility with the intended PCB footprint and soldering processes before finalizing procurement orders.

Selection Notes

Select this component based on its -20V rating and low RDS(ON) specifications suitable for efficient power switching. Consider the thermal resistance and power dissipation limits relative to the expected operating temperature range. Evaluate the gate threshold voltage requirements to ensure proper drive compatibility within the circuit design.

Part Context

This part belongs to the DMP series of P-channel MOSFETs from Diodes Incorporated. It is designed for surface mount assembly in compact electronic designs. The device is intended for general-purpose switching applications requiring low on-resistance and fast response times.

Replacement Considerations

DMP2110UW-13 is a verified substitute offering identical electrical characteristics but packaged in a 10,000-unit tape and reel format instead of the standard 3,000-unit configuration.