DMP2120U-13

$0.29

Description：MOSFET P-CH 20V 3.8A SOT23 T&R 1
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:2887d28f14ed Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 3.8A SOT23 T&R 1
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：62mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：6.3 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：487 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：800mW
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMP2120U-13

Overview

The DMP2120U-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -20V drain-source voltage (BVDSS) and a maximum continuous drain current of -3.8A at +25°C. The device offers a low on-resistance (RDS(ON)) of 62mΩ at VGS = -4.5V and 90mΩ at VGS = -2.5V. Packaged in an SOT-23 case, it supports a total power dissipation of 0.8W with a thermal resistance of 163°C/W. Operating temperatures range from -55°C to +150°C.

Feature Summary

Low on-state resistance for high-efficiency power management
Fast switching speed with low input capacitance
Low input/output leakage characteristics
Totally lead-free and fully RoHS compliant

Applications

Battery charging systems
Power management functions
DC-DC converters
Portable power adaptors

Procurement Notes

Verify the ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration as specified in the manufacturer's documentation. Confirm that the component meets the required environmental standards, specifically being halogen-free, antimony-free, and fully RoHS compliant. Ensure the selected package type matches the SOT-23 mechanical data provided in the datasheet.

Selection Notes

Select this component when a P-channel MOSFET with a -20V rating and low on-resistance is required for portable or battery-powered applications. Consider the -3.8A continuous drain current limit and the 0.8W power dissipation capability under standard FR-4 substrate conditions. Evaluate the gate threshold voltage requirements against the available drive voltages in the target circuit design.

Part Context

This part belongs to the DMP series of P-channel enhancement mode MOSFETs designed by Diodes Incorporated. It utilizes a surface-mount SOT-23 package suitable for automated assembly processes. The device is engineered to minimize on-state resistance while maintaining superior switching performance for efficient power conversion.