DMP2123L-7

$0.38

Description：MOSFET P-CH 20V 3A SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:c056c638fdff Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 3A SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：72mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id：1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：7.3 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：443 pF @ 16 V
FET Feature：-
Power Dissipation (Max)：1.4W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMP2123L-7

Overview

The DMP2123L-7 is a P-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It features a drain-source voltage of -20 V and a continuous drain current of -3.0 A at +25°C. The device offers low on-state resistance, specified as 72 mΩ at VGS = -4.5V and ID = -3.5A. Total power dissipation is rated at 1.4 W with a thermal resistance of 90 °C/W. Operating temperature ranges from -55 to +150 °C. The component utilizes an SOT-23 surface-mount package.

Feature Summary

Low static drain-source on-resistance for efficient switching
Qualified to AEC-Q101 standards for high reliability
Totally lead-free and fully RoHS compliant construction

Applications

Power management circuits
Battery protection systems
Load switch applications

Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration. Confirm that the component meets all applicable environmental compliance requirements for the target market. Ensure proper handling procedures are followed during assembly due to the small outline package dimensions.

Selection Notes

Evaluate the maximum continuous drain current against the circuit load requirements. Check the gate threshold voltage compatibility with the driving logic levels. Consider the thermal resistance when designing the PCB copper area for adequate heat dissipation under steady-state conditions.

Part Context

This component belongs to the DMP2123 series of P-channel MOSFETs. It is designed for general-purpose switching applications requiring low on-resistance in a compact footprint. The device is suitable for portable electronics and battery-powered equipment where space efficiency is critical.