DMP2123LQ-7

$0.54

Description：MOSFET P-CH 20V 3A SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:79d28388343d Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 3A SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：72mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id：1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：7.3 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：443 pF @ 16 V
FET Feature：-
Power Dissipation (Max)：1.4W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMP2123LQ-7

Overview

The DMP2123LQ-7 is a P-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It features a drain-source voltage (VDSS) of -20 V and a continuous drain current (ID) of -3.0 A at +25°C. The device exhibits a low static drain-source on-resistance (RDS(ON)) of 72 mΩ at VGS = -4.5V and ID = -3.5A, with values of 108 mΩ at -2.7V and 123 mΩ at -2.5V. Total power dissipation is rated at 1.4 W, and the junction-to-ambient thermal resistance is 90 °C/W. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Qualified to AEC-Q101 standards for high reliability in automotive applications
Low input and output leakage characteristics
Totally lead-free and fully RoHS compliant construction
Halogen and antimony free "Green" device

Applications

Automotive electronic systems requiring high reliability components
Power management circuits utilizing P-channel MOSFETs
Load switching applications in consumer electronics

Procurement Notes

Verify that the specific part number includes the Q suffix to confirm AEC-Q101 qualification status. Ensure packaging matches the required tape and reel quantity, such as 3,000 units for the -7 suffix or 10,000 units for the -13 suffix. Confirm compliance with RoHS directives and halogen-free requirements if specified for your manufacturing process.

Selection Notes

Select this component when an automotive-grade P-channel MOSFET with a -20V rating is required. Consider the RDS(ON) specifications at various gate voltages (-4.5V, -2.7V, -2.5V) to ensure compatibility with your logic drive levels. Verify that the SOT23 package dimensions and thermal characteristics meet your board layout and heat dissipation constraints.

Part Context

This component belongs to the DMP2123L series of P-channel enhancement mode field effect transistors produced by Diodes Incorporated. The standard DMP2123L variant shares similar electrical characteristics but lacks the explicit AEC-Q101 automotive qualification associated with the LQ suffix. Both variants utilize the SOT23 surface-mount package.