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Product Detailed Parameters
- Description：MOSFET P-CH 20V 2.5A SOT323 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：90mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：3.5 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：335 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
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Overview
The DMP2165UW-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT323 surface-mount package. It features a drain-source breakdown voltage of -20 V and a maximum continuous drain current of -2.5 A at +25°C. The device exhibits a low on-resistance of 90 mΩ at VGS = -4.5V and 120 mΩ at VGS = -2.5V. Total power dissipation reaches 0.5 W, with an operating temperature range from -55°C to +150°C.
Feature Summary
- Designed for high efficiency power management applications through minimized on-state resistance while maintaining superior switching performance.
- Features low input capacitance and fast switching speed characteristics suitable for dynamic circuit operations.
- Compliant with RoHS directives and constructed as a halogen- and antimony-free green device.
Applications
- Motor Control
- Power Management Functions
- Backlighting
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantities. The -7 suffix indicates a 3000-unit tape and reel configuration. Confirm that the component meets all required environmental standards and lead-free specifications before finalizing procurement orders.
Selection Notes
Select this component when a compact P-channel switch is required for low-voltage applications. Ensure the gate drive voltage aligns with the specified thresholds for optimal on-resistance. Evaluate thermal constraints carefully due to the small SOT323 footprint and associated thermal resistance values under steady-state conditions.
Part Context
This part belongs to the DMP2165UW series of P-channel enhancement mode MOSFETs. It utilizes silicon technology housed in a molded plastic SOT323 case with matte tin annealed terminals over an alloy 42 leadframe. The device is designed to minimize self-heating effects during short-duration pulse testing.
Replacement Considerations
Consult official manufacturer substitution lists for verified alternatives. Cross-referencing requires matching critical parameters such as voltage ratings, current capabilities, and package dimensions to ensure functional compatibility without modifying existing circuit designs.
FAQ
What is the maximum continuous body diode forward current?
The maximum continuous body diode forward current (IS) is rated at -1.0 A.
How does junction temperature affect the on-resistance?
The on-resistance increases as the junction temperature rises, as illustrated in the typical on-resistance versus junction temperature graphs provided in the datasheet.
