DMP21D0UFB-7

$0.09

Description：MOSFET P-CH 20V 770MA 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:32ac961b7adb Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 770MA 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：770mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：495mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.5 nC @ 8 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：76.5 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：430mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X1-DFN1006-3
Package / Case：3-UFDFN

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DMP21D0UFB-7

Overview

The DMP21D0UFB-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -20V drain-source breakdown voltage and an X1-DFN1006-3 package. The device provides a maximum continuous drain current of -0.77A at +25°C with a typical on-resistance of 495mΩ at VGS=-4.5V. It operates within a temperature range of -55°C to +150°C.

Feature Summary

Designed for high-efficiency power management applications with minimized on-state resistance.
Features a footprint of 0.6mm², significantly smaller than SOT23 packages.
Includes ESD protected gate structure for enhanced reliability.
Qualified to AEC-Q101 standards for automotive-grade high reliability.

Applications

Portable electronics
High-efficiency power management circuits

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the component meets RoHS compliance requirements and is halogen-free. Ensure the application environment does not exceed the specified thermal limits or voltage ratings defined in the datasheet.

Selection Notes

Select this component when a compact surface-mount solution is required for low-voltage power switching. The small X1-DFN1006-3 package is suitable for space-constrained designs. Consider the on-resistance values at different gate voltages to ensure adequate drive capability for the target load current.

Part Context

This part belongs to the DMP21D0UFB series of P-channel MOSFETs from Diodes Incorporated. It utilizes the X1-DFN1006-3 case style, which offers a reduced physical footprint compared to traditional SOT23 packages while maintaining similar electrical performance characteristics for portable applications.