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Product Detailed Parameters
- Description：MOSFET P-CH 20V 770MA 3DFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：770mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：495mOhm @ 400mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.54 nC @ 8 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：80 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：430mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X2-DFN1006-3
- Package / Case：3-XFDFN
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Overview
The DMP21D0UFB4-7B is a 20V P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features an X2-DFN1006-3 package with a maximum drain-source voltage (VDSS) of -20V and a continuous drain current (ID) of -0.77A at +25°C. The device exhibits a static drain-source on-resistance (RDS(ON)) of 495mΩ at VGS = -4.5V. Operating temperatures range from -55°C to +150°C, with power dissipation rated at 0.43W on FR-4 substrate.
Feature Summary
- Ultra-small footprint of 0.6mm², significantly reducing board space compared to traditional SOT23 packages.
- Low profile construction with a 0.4mm height, suitable for compact low-profile applications.
- Integrated ESD protection diode on the gate terminal for enhanced reliability.
- Designed for high efficiency power management through minimized on-state resistance and fast switching performance.
Applications
- Portable electronics
- High efficiency power management circuits
Procurement Notes
Verify the specific ordering suffix '-7B' corresponds to the 10,000-unit reel configuration as documented in the datasheet. Confirm that the component marking 'NO' matches the specified part marking code for this variant. Ensure compatibility with the X2-DFN1006-3 pad layout provided in the mechanical data section during procurement planning.
Selection Notes
Select this component when board space constraints require a footprint smaller than standard SOT23 packages while maintaining P-channel functionality. Consider the thermal resistance characteristics and power dissipation limits relative to the intended PCB copper area and thermal via usage. Evaluate the gate threshold voltage requirements against the driving circuit capabilities to ensure reliable switching at the desired load currents.
Part Context
This device belongs to the DMP21 series of P-channel MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in an X2-DFN1006-3 case material described as molded plastic with a UL 94V-0 flammability rating. The terminals are finished with NiPdAu over a copper leadframe, ensuring solderability per MIL-STD-208 standards.
Replacement Considerations
Datasheets list DMP21D0UFB4-7R as a similar part number within the same family, differing primarily in packaging quantity rather than electrical function.
FAQ
What is the maximum pulsed drain current for the DMP21D0UFB4-7B?
The maximum pulsed drain current (IDM) is -5.0 A, measured under conditions of a 10 µs pulse duration with a 1% duty cycle on a minimum recommended pad layout test board.
How does the on-resistance vary with temperature?
The typical on-resistance increases as ambient temperature rises. Graphical data indicates normalized on-resistance variation across an operating temperature range from -55°C to +150°C for different gate-source voltages.
