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Product Detailed Parameters
- Description：MOSFET P-CH 20V 820MA 3DFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：820mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：495mOhm @ 800mA, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：3 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：80 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：490mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X1-DFN1212-3
- Package / Case：3-UDFN
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Overview
The DMP21D0UFD-7 is a 20V P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features an X1-DFN1212-3 surface-mount package with a maximum drain-source voltage of -20V and a continuous drain current of -1.14A at 25°C. The device exhibits a low on-state resistance, specified as 495mΩ at VGS = -4.5V and ID = -800mA. Key electrical parameters include a gate threshold voltage ranging from -0.45V to -1.2V, a total gate charge of 1.5nC at VGS = -8V, and a power dissipation capacity of 930mW under standard PCB mounting conditions.
Feature Summary
- Designed for high efficiency power management applications through minimized on-state resistance and superior switching performance.
- Features a low gate threshold voltage suitable for logic-level driving in portable electronics.
- Includes integrated ESD protection on the gate terminal rated up to 3kV.
- Qualified to AEC-Q101 standards for automotive-grade high reliability.
Applications
- Portable electronics
- High efficiency power management circuits
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 3000-unit reel quantity and 8mm tape width defined in the manufacturer's documentation. Confirm that the X1-DFN1212-3 package dimensions align with your PCB footprint requirements. Ensure compliance with RoHS 2 and REACH directives if required by your manufacturing environment. Cross-reference the datasheet revision DS35364 Rev. 4-2 to ensure accurate thermal and electrical specifications are applied during design validation.
Selection Notes
Select this component when a compact P-channel MOSFET with low RDS(on) is required for space-constrained designs. The X1-DFN1212-3 package offers a small footprint compared to traditional SOT-23 packages while maintaining adequate thermal performance for moderate current loads. Consider the -20V rating and -1.14A continuous current limits to ensure operation within safe boundaries. The low gate threshold voltage makes it compatible with various logic families for efficient control.
Part Context
This part belongs to the DMP21 series of P-channel enhancement mode MOSFETs from Diodes Incorporated. The series includes variants with different current ratings and packaging options, such as the DMP21D0UT-7 in SOT-523 and the DMP21D0UFB4Q-7B in X2-DFN1006-3. The DMP21D0UFD-7 specifically utilizes the X1-DFN1212-3 package, distinguishing it by its physical dimensions and thermal characteristics within the product family.
Replacement Considerations
Direct substitutes include other Diodes Incorporated parts from the same series, such as DMP21D0UT-7 or DMP21D0UFB4Q-7B, provided the package type change is acceptable. Verify pinout compatibility and thermal resistance differences when replacing with alternative packages. No cross-manufacturer replacements are confirmed in the source material.
