DMP21D5UFB4-7B

DMP21D5UFB4-7B

$0.24
  • Description:MOSFET P-CH 20V 700MA 3DFN
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:4e94a0314620 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET P-CH 20V 700MA 3DFN
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:700mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):1.2V, 5V
  • Rds On (Max) @ Id, Vgs:970mOhm @ 100mA, 5V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:0.5 nC @ 4.5 V
  • Vgs (Max):±8V
  • Input Capacitance (Ciss) (Max) @ Vds:46.1 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):460mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:X2-DFN1006-3
  • Package / Case:3-XFDFN

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DMP21D5UFB4-7B

Overview

The DMP21D5UFB4-7B is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V(BR)DSS) of -20V and an ultra-small X2-DFN1006-3 surface mount package with a maximum height of 0.4mm. The device offers low on-state resistance, rated at a maximum of 1.0Ω at VGS = -4.5V, and a continuous drain current (ID) of -700mA at TA = 25°C. Key electrical parameters include a gate threshold voltage (VGS(th)) of up to -1.0V, total gate charge (Qg) of 0.5nC, and input capacitance (Ciss) of 46.1pF. Operating temperatures range from -55°C to +150°C.

Feature Summary

  • Ultra-low package profile with a maximum height of 0.4mm in an X2-DFN1006-3 case.
  • Low on-state resistance optimized for high efficiency power management applications.
  • Very low gate threshold voltage enabling effective operation with low drive voltages.
  • Integrated ESD protection diode on the gate terminal.

Applications

  • DC-DC converters
  • Power management functions

Procurement Notes

Verify that the specific part number matches the required package type and electrical ratings before procurement. Confirm compliance with RoHS and AEC-Q101 standards if automotive or strict environmental regulations apply. Ensure the ordering suffix corresponds to the correct tape and reel quantity specified by the manufacturer.

Selection Notes

Select this component when a compact footprint and low on-resistance are critical for space-constrained designs. Consider the -20V rating and -700mA continuous current limits to ensure adequate headroom for the target application. Evaluate the low gate threshold voltage suitability against the available control logic levels.

Part Context

This component belongs to the DMP21 series of P-channel MOSFETs from Diodes Incorporated. It utilizes silicon technology and is designed to minimize on-state resistance while maintaining superior switching performance. The device is qualified to AEC-Q101 standards for high reliability.

Replacement Considerations

Consult official datasheets for compatible substitutes such as the DMP21D5UFA-7B or other members of the DMP21 family. Verify pinout compatibility and thermal characteristics before substituting.

FAQ

What is the maximum package height?

The maximum package height is 0.4mm.

Is the gate protected against electrostatic discharge?

Yes, the device includes an integrated ESD protection diode on the gate.

DMP21D5UFB4-7BDMP21D5UFB4-7B
$0.24
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