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The DMP21D5UFB4-7B is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V(BR)DSS) of -20V and an ultra-small X2-DFN1006-3 surface mount package with a maximum height of 0.4mm. The device offers low on-state resistance, rated at a maximum of 1.0Ω at VGS = -4.5V, and a continuous drain current (ID) of -700mA at TA = 25°C. Key electrical parameters include a gate threshold voltage (VGS(th)) of up to -1.0V, total gate charge (Qg) of 0.5nC, and input capacitance (Ciss) of 46.1pF. Operating temperatures range from -55°C to +150°C.
Verify that the specific part number matches the required package type and electrical ratings before procurement. Confirm compliance with RoHS and AEC-Q101 standards if automotive or strict environmental regulations apply. Ensure the ordering suffix corresponds to the correct tape and reel quantity specified by the manufacturer.
Select this component when a compact footprint and low on-resistance are critical for space-constrained designs. Consider the -20V rating and -700mA continuous current limits to ensure adequate headroom for the target application. Evaluate the low gate threshold voltage suitability against the available control logic levels.
This component belongs to the DMP21 series of P-channel MOSFETs from Diodes Incorporated. It utilizes silicon technology and is designed to minimize on-state resistance while maintaining superior switching performance. The device is qualified to AEC-Q101 standards for high reliability.
Consult official datasheets for compatible substitutes such as the DMP21D5UFA-7B or other members of the DMP21 family. Verify pinout compatibility and thermal characteristics before substituting.
The maximum package height is 0.4mm.
Yes, the device includes an integrated ESD protection diode on the gate.