DMP21D5UFD-7

$0.35

Description：MOSFET P-CH 20V 600MA 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:b7c7aa82b628 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 600MA 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.2V, 4.5V
Rds On (Max) @ Id, Vgs：1Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.8 nC @ 8 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：46.1 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：400mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X1-DFN1212-3
Package / Case：3-UDFN

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DMP21D5UFD-7

Overview

The DMP21D5UFD is a P-Channel Enhancement Mode MOSFET from Diodes Incorporated, housed in an X1-DFN1212-3 package. It features a Drain-Source Voltage (VDSS) of -20V and a Gate-Source Voltage (VGSS) of ±8V. The device offers low on-state resistance, with RDS(ON) values ranging from 0.7Ω to 3.0Ω depending on the gate drive voltage (-4.5V to -1.5V). Continuous drain current (ID) varies between -250mA and -600mA based on operating conditions. Key electrical parameters include a maximum gate threshold voltage of -1.0V, total gate charge of 0.5nC at VGS=-4.5V, and input capacitance of 46.1pF. Thermal characteristics specify a junction-to-ambient thermal resistance of 280°C/W.

Feature Summary

Low On-Resistance for high efficiency power management
Very Low Gate Threshold Voltage (Max 1.0V)
ESD Protected Gate structure
Fast Switching Speed with low input capacitance

Applications

DC-DC Converters
Power Management Functions

Procurement Notes

Verify component authenticity through authorized Diodes Incorporated channels or certified distributors. Confirm that the received parts match the specified X1-DFN1212-3 package and marking codes. Ensure compliance with RoHS and AEC-Q101 standards if required by your specific application environment. Check for any updated design recommendations as this part may be superseded.

Selection Notes

Select this component for applications requiring a compact P-Channel MOSFET with low on-resistance and fast switching capabilities. Consider the -20V rating and small form factor suitable for space-constrained designs. Evaluate the thermal performance and current derating curves against your specific load requirements and ambient temperature conditions.

Part Context

This component belongs to Diodes Incorporated's advanced generation of MOSFETs designed to minimize on-state resistance while maintaining superior switching performance. It is specifically engineered for high-efficiency power management applications where size and thermal performance are critical constraints.