DMP2200UDW-13

DMP2200UDW-13

$0.30
  • Description:MOSFET 2P-CH 20V 0.9A SOT363
  • Series:-

SKU:871de49eeb22 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:MOSFET 2P-CH 20V 0.9A SOT363
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:900mA
  • Rds On (Max) @ Id, Vgs:260mOhm @ 880mA, 4.5V
  • Vgs(th) (Max) @ Id:1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:2.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:184pF @ 10V
  • Power - Max:450mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SOT-363
  • Grade:-
  • Qualification:-

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DMP2200UDW-13

Overview

The DMP2200UDW-13 is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -20V drain-source voltage rating and a maximum continuous drain current of -0.9A at 25°C. The device offers low on-state resistance, specified as 260mΩ max at VGS = -4.5V and ID = -0.88A. Total gate charge is 2.1nC max at VGS = -4.5V, with input capacitance at 184pF max at VDS = -10V. It operates within a junction temperature range of -55°C to +150°C and utilizes an SOT363 surface-mount package.

Feature Summary

  • Dual P-channel configuration designed for high-efficiency power management applications
  • Low on-state resistance minimizes conduction losses across various gate voltages
  • Fast switching speed supported by low input capacitance and total gate charge
  • ESD protected gate structure ensures robust performance against electrostatic discharge

Applications

  • Battery disconnect switches
  • Load switches for power management functions

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging format when sourcing components. Confirm that the component meets RoHS 2 and halogen-free requirements as defined by the manufacturer's green product standards. Ensure compatibility with standard SOT363 footprint layouts during procurement planning.

Selection Notes

Select this component for designs requiring compact dual P-channel switching in space-constrained environments. Evaluate thermal dissipation capabilities based on the 275°C/W junction-to-ambient resistance under standard FR-4 substrate conditions. Consider the gate threshold voltage characteristics relative to the driving logic levels available in the target circuit design.

Part Context

This part belongs to the DMP series of dual MOSFETs from Diodes Incorporated. It provides a compact solution for managing multiple power rails or differential switching tasks within a single SOT363 package. The device integrates two independent P-channel enhancement mode transistors optimized for low static and dynamic power consumption.

Replacement Considerations

The DMP2200UDW-7 serves as a direct functional substitute with identical electrical specifications, differing only in the packaging quantity (3,000 units per tape and reel). Verify pinout alignment and thermal characteristics before implementation.

FAQ

What is the maximum continuous drain current rating?

The maximum continuous drain current is -0.9A at an ambient temperature of 25°C.

Does the device include internal protection mechanisms?

Yes, the gate structure is specifically designed to be ESD protected.

What is the typical turn-off delay time?

The typical turn-off delay time is 24.4ns under standard test conditions.

DMP2200UDW-13DMP2200UDW-13
$0.30
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