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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 0.35A 6DFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：350mA (Ta)
- Rds On (Max) @ Id, Vgs：1.9Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：17pF @ 15V
- Power - Max：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-SMD, No Lead
- Supplier Device Package：X2-DFN0806-6
- Grade：-
- Qualification：-
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Overview
The DMP22D5UDA-7B is a dual P-channel enhancement mode MOSFET in an X2-DFN0806-6 package. It features a drain-source voltage (V_DSS) of -20 V and a maximum continuous drain current (I_D) of -350 mA at +25°C. The on-resistance (R_DS(ON)) ranges from 1.9 Ω to 5 Ω depending on the gate-source voltage (-4.5 V to -1.5 V). Key electrical parameters include a gate threshold voltage (V_GS(TH)) of -1.0 V max, input capacitance (C_iss) of 17 pF, and total power dissipation of 0.36 W.
Feature Summary
- Dual P-channel configuration with integrated ESD protection diodes for each gate terminal.
- Ultra-small surface mount footprint designed to minimize board space requirements.
- Optimized low on-state resistance combined with fast switching speed characteristics.
- Low gate threshold voltage enabling efficient drive from low-voltage logic interfaces.
Applications
- General purpose interfacing switch
- Power management functions
- Analog switch
Procurement Notes
Verify the specific ordering suffix '-7B' against official Diodes Incorporated documentation to confirm the 10,000-unit tape and reel packaging format. Ensure that the component meets all applicable RoHS and halogen-free environmental compliance standards required by your manufacturing specifications before finalizing procurement orders.
Selection Notes
Select this component when a compact dual P-channel solution is required for low-current applications. The device is suitable for designs needing high efficiency due to its minimized on-state resistance. Verify that the -20 V rating aligns with the system's maximum voltage levels and that the thermal constraints of the small package are manageable within the target application environment.
Part Context
This part belongs to the DMP22 series of dual P-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. The series focuses on providing high-efficiency switching capabilities within ultra-small packages. The DMP22D5UDA specifically targets general-purpose interfacing and power management tasks requiring minimal physical footprint.
Replacement Considerations
Consult official manufacturer substitution guides or contact Diodes Incorporated directly for verified alternative part numbers. Do not assume functional equivalence based solely on similar package dimensions or nominal voltage ratings without reviewing complete datasheet specifications.
FAQ
What is the maximum continuous drain current for the DMP22D5UDA?
The maximum continuous drain current is -350 mA at an ambient temperature of +25°C, decreasing to -280 mA at +70°C.
Does the DMP22D5UDA include internal protection features?
Yes, the device includes ESD protected gates and features integrated gate protection diodes for both channels.
What is the typical input capacitance of this MOSFET?
The typical input capacitance (C_iss) is 17 pF, measured at a drain-source voltage of -15 V and a frequency of 1.0 MHz.
