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Product Detailed Parameters
- Description：MOSFET 2N/2P-CH 10.6V 14SOIC
- Series：-
- Mfr：Advanced Linear Devices Inc.
- Package：Tube
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N and 2 P-Channel Matched Pair
- FET Feature：-
- Drain to Source Voltage (Vdss)：10.6V
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：500Ohm @ 5V
- Vgs(th) (Max) @ Id：1V @ 1µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：3pF @ 5V
- Power - Max：500mW
- Operating Temperature：0°C ~ 70°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：14-SOIC
- Grade：-
- Qualification：-
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Overview
The ALD1105SBL is a monolithic dual N-channel and dual P-channel complementary matched MOSFET pair housed in a 14-pin SOIC plastic package. It features a low threshold voltage of 0.7V, low input capacitance of 3pF, and an offset voltage of 10mV. The device operates within a temperature range of 0°C to +70°C with a maximum drain-source voltage of 10V and power dissipation of 500mW.
Feature Summary
- Thermal tracking between N-channel and P-channel pairs for precision applications
- Low threshold voltage of 0.7V for both N-channel and P-channel MOSFETs
- High input impedance with typical value of 10^13 ohms
- Negative current temperature coefficient for stable operation
Applications
- Precision current mirrors
- Complementary push-pull linear drives
- Analog switches
- Choppers
- Differential amplifier input stages
Procurement Notes
Verify the specific suffix 'SBL' corresponds to the 14-pin SOIC plastic package variant when ordering. Confirm that the operating temperature range meets the application requirements of 0°C to +70°C. Ensure static control procedures are followed due to ESD sensitivity. Check for lead-free (RoHS) compliance as indicated by the 'L' suffix.
Selection Notes
Select the ALD1105SBL for analog applications requiring high input impedance and low leakage currents. Consider the 10V drain-source voltage limit and 500mW power dissipation rating. Evaluate the need for thermal tracking between matched pairs. Compare against similar devices like the ALD1103 if higher current capabilities are required.
Part Context
The ALD1105 is part of Advanced Linear Devices' ACMOS silicon gate CMOS process family. It combines an ALD1116 N-channel pair and an ALD1117 P-channel pair into a single package. This integration allows for compact designs in precision signal switching and amplifying applications.
Replacement Considerations
The ALD1103 is a related device with higher current capabilities. Verify pin compatibility and electrical parameter differences before substitution. Consult the manufacturer for alternative packages or high-temperature versions if needed.
