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The DMP22D5UFZ-7B is a single P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in an X2-DFN0606-3 surface-mount package with three terminals. The device features a drain-source voltage (V_DSS) of -20 V and a maximum continuous drain current (I_D) of -0.33 A at +25°C. The static drain-source on-resistance (R_DS(ON)) is specified as 1.9 Ω at V_GS = -4.5 V, 2.4 Ω at V_GS = -2.5 V, 3.4 Ω at V_GS = -1.8 V, and 5.0 Ω at V_GS = -1.5 V. The gate-source threshold voltage (V_GS(TH)) has a maximum value of -1.0 V. Total power dissipation is rated at 0.32 mW under steady-state conditions on an FR-4 substrate. Operating and storage temperatures range from -55°C to +150°C.
Verify the specific ordering suffix '-7B' against official manufacturer documentation to confirm packaging details, specifically the 10K tape and reel carrier quantity. Ensure that the X2-DFN0606-3 package dimensions align with your PCB layout requirements. Confirm compliance with relevant environmental directives such as RoHS 3 and halogen-free standards before finalizing procurement specifications.
Select this component when a small form factor is required alongside moderate current handling capabilities. The low gate threshold voltage makes it suitable for logic-level control applications. Evaluate the thermal resistance characteristics relative to your board's copper area, as the low power dissipation rating necessitates careful thermal management in dense layouts.
This part belongs to the DMP22 series of P-channel MOSFETs from Diodes Incorporated. It shares similar electrical characteristics with other members like the DMP22D5UDA-7B but differs in physical packaging. While the DMP22D5UDA-7B uses an X2-DFN0806-6 package, the DMP22D5UFZ-7B utilizes the smaller X2-DFN0606-3 package, offering a more compact solution for space-constrained designs.
Public confirmed substitute part numbers are not available in the provided source material.
The absolute maximum rating for Gate-Source Voltage (V_GSS) is ±8 V.
The R_DS(ON) increases as the gate-source voltage decreases. It is 1.9 Ω at -4.5 V, 2.4 Ω at -2.5 V, 3.4 Ω at -1.8 V, and 5.0 Ω at -1.5 V.