DMP22D5UFZ-7B

DMP22D5UFZ-7B

$0.18
  • Description:MOSFET BVDSS: 8V~24V X2-DFN0606-
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:201a1322b190 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:MOSFET BVDSS: 8V~24V X2-DFN0606-
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:330mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
  • Rds On (Max) @ Id, Vgs:1.9Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:0.3 nC @ 4.5 V
  • Vgs (Max):±8V
  • Input Capacitance (Ciss) (Max) @ Vds:17 pF @ 16 V
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:X2-DFN0606-3
  • Package / Case:3-XFDFN

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DMP22D5UFZ-7B

Overview

The DMP22D5UFZ-7B is a single P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in an X2-DFN0606-3 surface-mount package with three terminals. The device features a drain-source voltage (V_DSS) of -20 V and a maximum continuous drain current (I_D) of -0.33 A at +25°C. The static drain-source on-resistance (R_DS(ON)) is specified as 1.9 Ω at V_GS = -4.5 V, 2.4 Ω at V_GS = -2.5 V, 3.4 Ω at V_GS = -1.8 V, and 5.0 Ω at V_GS = -1.5 V. The gate-source threshold voltage (V_GS(TH)) has a maximum value of -1.0 V. Total power dissipation is rated at 0.32 mW under steady-state conditions on an FR-4 substrate. Operating and storage temperatures range from -55°C to +150°C.

Feature Summary

  • Low package profile with a maximum height of 0.42 mm and a compact 0.62 mm x 0.62 mm footprint.
  • Very low gate threshold voltage for efficient switching performance.
  • ESD protected gate structure integrated within the component design.
  • Totally lead-free and fully RoHS compliant construction.

Applications

  • General purpose interfacing switches
  • Power management functions
  • Analog switches

Procurement Notes

Verify the specific ordering suffix '-7B' against official manufacturer documentation to confirm packaging details, specifically the 10K tape and reel carrier quantity. Ensure that the X2-DFN0606-3 package dimensions align with your PCB layout requirements. Confirm compliance with relevant environmental directives such as RoHS 3 and halogen-free standards before finalizing procurement specifications.

Selection Notes

Select this component when a small form factor is required alongside moderate current handling capabilities. The low gate threshold voltage makes it suitable for logic-level control applications. Evaluate the thermal resistance characteristics relative to your board's copper area, as the low power dissipation rating necessitates careful thermal management in dense layouts.

Part Context

This part belongs to the DMP22 series of P-channel MOSFETs from Diodes Incorporated. It shares similar electrical characteristics with other members like the DMP22D5UDA-7B but differs in physical packaging. While the DMP22D5UDA-7B uses an X2-DFN0806-6 package, the DMP22D5UFZ-7B utilizes the smaller X2-DFN0606-3 package, offering a more compact solution for space-constrained designs.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.

FAQ

What is the maximum gate-source voltage rating?

The absolute maximum rating for Gate-Source Voltage (V_GSS) is ±8 V.

How does the on-resistance vary with gate voltage?

The R_DS(ON) increases as the gate-source voltage decreases. It is 1.9 Ω at -4.5 V, 2.4 Ω at -2.5 V, 3.4 Ω at -1.8 V, and 5.0 Ω at -1.5 V.

DMP22D5UFZ-7BDMP22D5UFZ-7B
$0.18
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