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Product Detailed Parameters
- Description：MOSFET BVDSS: 8V~24V X2-DFN1006-
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：600mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：1.9Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：500 pC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：24 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：460mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X2-DFN1006-3
- Package / Case：3-XFDFN
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Overview
The DMP22D6UFB4-7B is a single P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 20V drain-source breakdown voltage (Vds) and supports a continuous drain current of 600mA at ambient temperature. The device exhibits a maximum on-resistance (Rds(on)) of 150 milliohms at a gate-source voltage of -4.5V. It operates within a junction temperature range of -55°C to +150°C and is housed in an X2-DFN1006-3 surface-mount package.
Feature Summary
- Single P-channel configuration for efficient low-side switching applications
- Low on-resistance characteristics optimized for minimal power loss
- Enhancement mode operation compatible with standard logic levels
- Robust thermal performance supporting high junction temperatures
Applications
- Battery protection circuits
- Power management systems
- Load switching applications
Procurement Notes
Verify the specific ordering suffix and package variant against official Diodes Incorporated documentation to ensure compatibility with design requirements. Confirm RoHS compliance status and manufacturing origin details through authorized channels prior to procurement. Cross-reference the component marking code with the datasheet to authenticate the source and prevent counterfeit risks during supply chain acquisition.
Selection Notes
Select this component for designs requiring compact P-channel switching with low conduction losses. Ensure the gate drive voltage aligns with the specified threshold and on-resistance conditions. Evaluate thermal dissipation capabilities relative to the PCB copper area and ambient operating conditions to maintain reliability within the specified temperature limits.
Part Context
This part belongs to the DMP22 series of P-channel MOSFETs from Diodes Incorporated, designed for general-purpose switching. The X2-DFN1006-3 package provides a small footprint suitable for space-constrained portable electronics and industrial control boards. It complements other discrete semiconductors in power management and signal routing architectures.
Replacement Considerations
Consult official substitution guides for equivalent P-channel MOSFETs with matching Vds, Id, and Rds(on) specifications. Verify pinout compatibility and thermal resistance parameters before integrating alternative components into existing layouts.
