ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET BVDSS: 8V~24V X2-DFN1006-
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：600mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：1.9Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：500 pC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：24 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：460mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：X2-DFN1006-3
- Package / Case：3-XFDFN
Download product information
Overview
The DMP22D6UFB4Q-7B is a single P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes silicon technology and operates in the SMD/SMT mounting style within an X2-DFN1006-3 package. The device features a drain-source breakdown voltage (Vds) of 20 V and a continuous drain current (Id) of 430 mA. Its on-resistance (Rds On) is specified at 700 mOhms, with a gate-source voltage range of -8 V to 8 V and a threshold voltage (Vgs th) of 1 V. The component supports a power dissipation of 150 mW and functions across a temperature range from -55 C to +150 C.
Feature Summary
- Single P-channel configuration for efficient switching applications
- Enhancement mode operation for standard logic control compatibility
- Silicon-based construction ensuring reliable thermal performance
Applications
- Battery protection circuits
- Power management systems
- Load switching applications
Procurement Notes
Verify the specific ordering suffix to ensure the correct package variant and tape-and-reel quantity match project requirements. Confirm RoHS compliance status through official manufacturer documentation before integration. Cross-reference the Mouser part number 621-DMP22D6UT-7 for availability details and lead time estimates from authorized distributors. Ensure storage conditions align with semiconductor handling standards to prevent moisture sensitivity issues during assembly.
Selection Notes
Select this component when a compact P-channel switch is required for low-voltage DC loads. The 20 V rating suits 12 V battery systems, while the 430 mA current capability handles moderate signal paths. The X2-DFN1006-3 package offers space-saving advantages for dense PCB layouts. Evaluate the 700 mOhm on-resistance against thermal constraints to ensure adequate heat dissipation without additional cooling measures.
Part Context
This device belongs to the DMP22 series of small-signal MOSFETs from Diodes Incorporated. The series targets portable electronics and industrial control markets requiring high-density packaging. Similar variants include the DMP22D4UFA-7B and DMP22D5UDA-7B, which offer different pin configurations or electrical characteristics within the same product family.
Replacement Considerations
Direct substitutes may include other 20 V P-channel MOSFETs in X2-DFN1006-3 packages from Diodes Incorporated. Verify pinout compatibility and Rds On specifications before substitution. Alternative manufacturers offering equivalent voltage and current ratings in identical footprints should be evaluated for functional parity.
