DMP25H18DLFDE-13

$0.45

Description：MOSFET P-CH 250V 260MA 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:dd23d7ba010b Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 250V 260MA 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：250 V
Current - Continuous Drain (Id) @ 25°C：260mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：3.5V, 10V
Rds On (Max) @ Id, Vgs：14Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：2.8 nC @ 10 V
Vgs (Max)：±40V
Input Capacitance (Ciss) (Max) @ Vds：81 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：600mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type E)
Package / Case：6-PowerUDFN

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DMP25H18DLFDE-13

Overview

The DMP25H18DLFDE-13 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a U-DFN2020-6 (Type E) surface-mount package. It features a drain-source voltage of -250V and a continuous drain current of -0.26A at +25°C. The device exhibits a maximum on-resistance of 14Ω at VGS = -10V and 18Ω at VGS = -3.5V. Total power dissipation is rated at 0.6W with a junction-to-ambient thermal resistance of 191°C/W. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Low-profile 0.6mm case height suitable for space-constrained designs
Minimized on-state resistance combined with optimized switching performance
Totally lead-free and fully RoHS compliant construction
Halogen and antimony free green device configuration

Applications

General purpose interfacing switch
Load switching circuits
Battery management applications
Power management functions

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit reel quantity as documented in the manufacturer's ordering information. Confirm that the component marking 'H8' matches the required identification for production integration. Ensure compliance with moisture sensitivity level 1 requirements during storage and handling procedures.

Selection Notes

Select this component for high-voltage P-channel applications requiring low on-resistance and compact footprint. Evaluate the 14Ω on-resistance limit against circuit efficiency requirements at standard gate drive voltages. Consider the 0.6W power dissipation rating and thermal resistance when designing heat dissipation strategies for the target PCB layout.

Part Context

This part belongs to the DMP25H18DLFDE series manufactured by Diodes Incorporated. It utilizes silicon technology within a U-DFN2020-6 package. The datasheet DS37298 Rev. 4 provides the definitive electrical characteristics and mechanical dimensions for engineering validation and design implementation.