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Product Detailed Parameters
- Description：MOSFET BVDSS: 8V~24V PowerDI5060
- Series：-
- Mfr：Diodes Incorporated
- Package：Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：83A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：6mOhm @ 15A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：164 nC @ 10 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：5392 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.9W (Ta), 2.6W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
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Overview
The DMP26M1UPSW-13 is a 20V P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI5060-8 (Type UX) surface-mount package, which features a profile of less than 1.1mm. The device offers a maximum drain-source voltage (BVDSS) of -20V and a continuous drain current (ID) of -83A at +25°C case temperature. Static drain-source on-resistance (RDS(on)) is rated at a maximum of 6mΩ at VGS = -4.5V and 8mΩ at VGS = -2.5V. Total gate charge (Qg) is 75nC at VGS = -4.5V and 164nC at VGS = -10V.
Feature Summary
- Thermally efficient package design for cooler running applications
- Low RDS(on) to minimize on-state losses
- Low input capacitance for fast switching speed
- High conversion efficiency
Applications
- DC-DC Converters
- Load Switch
Procurement Notes
Verify the complete part number including the suffix '-13' to confirm the specific tape and reel packaging quantity of 2,500 units. Ensure the component matches the PowerDI5060-8 (Type UX) physical dimensions and pin configuration required for your PCB layout. Confirm RoHS compliance and halogen-free status if environmental regulations apply to your manufacturing process.
Selection Notes
Select this component when a low-profile P-channel MOSFET with high current capability is required. The device is suitable for applications demanding minimal thermal resistance and fast switching speeds. Verify that the system operates within the specified -55°C to +150°C junction temperature range and that the gate drive voltage aligns with the threshold requirements for optimal conduction.
Part Context
This component belongs to the DMP series of P-channel MOSFETs from Diodes Incorporated. It is designed as a next-generation device focusing on minimizing on-resistance while maintaining superior switching performance. The product line targets power management solutions where space constraints and thermal efficiency are critical design parameters.
Replacement Considerations
Consult official Diodes Incorporated documentation or authorized distributors for confirmed substitute part numbers. Do not assume cross-compatibility based solely on similar voltage or current ratings without verifying electrical characteristics and package dimensions.
